HUFA75307T3ST

$0.56

Description：MOSFET N-CH 55V 2.6A SOT223-4
Series：UltraFET™
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9693ce40218d Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

HUFA75307T3ST is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 55V 2.6A SOT223-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for HUFA75307T3ST

Description：MOSFET N-CH 55V 2.6A SOT223-4
Series：UltraFET™
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：90mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17 nC @ 20 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：250 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-223-4
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for HUFA75307T3ST

HUFA75307T3ST

Single FETs, MOSFETs Overview

The HUFA75307T3ST is a single N-Channel power MOSFET manufactured by onsemi using the UltraFET process. It features a 55V drain-source voltage rating and a continuous drain current of 2.6A at ambient temperature. The device has a maximum gate-source voltage of ±20V and a typical on-resistance of 1.1 Ohms. It operates within a temperature range of -55°C to +175°C with a power dissipation of 1.1W. The component is housed in a surface-mount SOT-223-4 package.

Single FETs, MOSFETs Feature Summary

Utilizes UltraFET process technology for optimized performance
Designed for applications requiring high power efficiency
Suitable for switching regulators and converters

Single FETs, MOSFETs Applications

Switching regulators
Switching converters
Motor drives
Relay drives

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix T3ST confirms the SOT-223-4 surface mount package variant, distinct from through-hole versions like the D3 or P3 suffixes. Confirm RoHS compliance status via official documentation before integration. Ensure thermal management aligns with the 1.1W dissipation limit in the selected enclosure.

Single FETs, MOSFETs Selection Notes

Select this component when a low-current, surface-mount N-Channel MOSFET is required for efficient power conversion. Compare against other UltraFET variants based on package constraints and current requirements. Verify that the 55V rating meets the circuit's peak voltage demands without excessive margin.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's UltraFET family of power MOSFETs, originally developed under Fairchild Semiconductor. The series emphasizes low on-resistance and fast switching capabilities. The HUFA75307T3ST represents the surface-mount implementation of the HUFA75307D3 through-hole device.