HUFA76407DK8T

FET, MOSFET Arrays Overview

The HUFA76407DK8T is a dual N-Channel Logic Level UltraFET Power MOSFET in an SOP-8 package. It features a drain-to-source voltage (VDS) of 60 V and continuous drain currents ranging from 1.0 A to 3.8 A depending on gate drive conditions. The device offers low on-resistance, specified as 0.105 Ω at VGS = 5 V and 0.090 Ω at VGS = 10 V. Thermal resistance (RθJA) varies between 50 °C/W and 228 °C/W based on copper pad area. Operating temperature spans -55 °C to 150 °C.

FET, MOSFET Arrays Feature Summary

• Dual N-Channel configuration within a single SOP-8 package
• Logic level operation with low on-resistance at 5 V gate drive
• Temperature compensated PSPICE and SABER simulation models

FET, MOSFET Arrays Applications

• Automotive industry applications requiring extreme test condition compliance
• Low voltage power switching circuits
• High frequency DC-DC converter designs

FET, MOSFET Arrays Procurement Notes

Verify the complete part number including the T suffix for tape and reel packaging. Confirm that the component meets AEC-Q101 requirements if automotive qualification is necessary. Ensure the design accounts for thermal coupling resistance between the two internal dies when calculating junction temperatures under load.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring dual isolated channels in a compact surface mount footprint. Evaluate the thermal resistance against the specific PCB copper pad area to ensure junction temperatures remain within the 150 °C limit. Consider the gate charge specifications when designing high-speed switching drivers.

FET, MOSFET Arrays Part Context

This component belongs to the UltraFET series manufactured by Fairchild Semiconductor, which was later acquired by onsemi. The datasheet indicates it is designed to meet automotive industry standards. The SOP-8 package contains two distinct die structures sharing a common source terminal.

FET, MOSFET Arrays Replacement Considerations

HUFA76407D3ST

FET, MOSFET Arrays FAQ

How does the thermal resistance change with mounting pad area?

Thermal resistance (RθJA) decreases as the top copper pad area increases. For example, RθJA is 228 °C/W with a 0.006 in² pad area and drops to 50 °C/W with a 0.76 in² pad area.

What are the available simulation models?

The datasheet provides temperature compensated PSPICE electrical models, SPICE thermal impedance models, and SABER electrical and thermal models.

Is this device qualified for automotive use?

Yes, the product is designed to meet the extreme test conditions demanded by the automotive industry and complies with AEC-Q101 standards.