HUFA76504DK8T

FET, MOSFET Arrays Overview

The HUFA76504DK8T is a dual N-channel logic level UltraFET power MOSFET in an SOP-8 package. It features a drain-source voltage of 80V and a continuous drain current of 2.3A at VGS=5V. The on-resistance is 0.222Ω at VGS=5V and 0.200Ω at VGS=10V. Internal gate resistance is 50Ω. Thermal resistance to ambient is 50°C/W with a 0.50 in² pad area. Switching times are 100ns (turn-on) and 160ns (turn-off) at VGS=4.5V. Gate charge is 6.6nC. Reverse recovery time is 62ns.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration within a single SOP-8 package
• Logic level operation suitable for low gate drive voltages
• Internal 50Ω gate resistance for simplified driver design
• Temperature compensated PSPICE and SABER simulation models

FET, MOSFET Arrays Applications

• Automotive power switching circuits
• DC-DC converter output stages
• Motor control applications
• Low voltage load switching

FET, MOSFET Arrays Procurement Notes

Verify the complete part number including the 'T' suffix for tape and reel packaging when ordering. Confirm that the component meets AEC-Q101 automotive standards if required for your specific application environment. Ensure proper ESD handling procedures are followed during storage and assembly to prevent damage to the sensitive gate oxide layer.

FET, MOSFET Arrays Selection Notes

Select this device for applications requiring dual isolated channels in a compact surface-mount footprint. Evaluate thermal performance based on actual copper pad area, as thermal resistance varies significantly from 50°C/W to 228°C/W depending on board layout. Consider the internal 50Ω gate resistance when designing gate drive circuits to ensure appropriate switching speeds without external resistors.

FET, MOSFET Arrays Part Context

This component belongs to the UltraFET family developed by Fairchild Semiconductor, now part of onsemi. The SOP-8 package houses two independent N-channel dies. The datasheet provides detailed thermal coupling resistance equations for calculating junction temperatures when both dies are active simultaneously under different power dissipation conditions.

FET, MOSFET Arrays Replacement Considerations

Check pinout compatibility with SOP-8 packages. Verify that replacement devices meet or exceed the 80V breakdown voltage and 0.222Ω on-resistance specifications. Ensure the substitute supports logic level gate drive requirements and has comparable thermal characteristics for the intended PCB copper area.

FET, MOSFET Arrays FAQ

How does the copper pad area affect thermal performance?

Thermal resistance to ambient ranges from 50°C/W with a 0.50 in² pad area to 228°C/W with a 0.006 in² pad area. Larger copper areas significantly improve heat dissipation capabilities.

What is the purpose of the internal gate resistance?

The integrated 50Ω gate resistance simplifies driver design by controlling switching speed and reducing ringing, eliminating the need for external gate resistors in many applications.

Are simulation models provided for circuit design?

Yes, temperature-compensated PSPICE and SABER electrical models, along with thermal impedance models for various copper pad areas, are available in the datasheet.