RF Diode HUM2010B product image

HUM2010B

  • Description:RF DIODE PIN 1000V 13W AXIAL
  • Series:-

SKU:5cb7a942632d Category: Brand:

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HUM2010B is listed in the RF Diode range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is RF DIODE PIN 1000V 13W AXIAL. Review the specifications below when checking this part for your BOM.

RF Diode specifications for HUM2010B

  • Description:RF DIODE PIN 1000V 13W AXIAL
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR)
  • Diode Type:PIN - Single
  • Voltage - Peak Reverse (Max):1000V
  • Current - Max:-
  • Capacitance @ Vr, F:4pF @ 100V, 1MHz
  • Resistance @ If, F:200mOhm @ 500mA, 4MHz
  • Power Dissipation (Max):13 W
  • Operating Temperature:-65°C ~ 175°C
  • Package / Case:Axial
  • Supplier Device Package:Axial
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for HUM2010B

HUM2010B

RF Diode Overview

The HUM2010B is a silicon PIN diode manufactured by Microchip Technology, designed for high-reliability switching applications. It features a hermetic glass axial package (CASE B) with two leads and an isolated case connection. Key electrical parameters include a minimum breakdown voltage of 1000 V, a maximum forward resistance of 0.2 Ω at 500 mA, and a typical capacitance of 3.4 pF with a maximum of 4 pF. The device operates as a single-element diode and is classified under ECCN EAR99.

RF Diode Feature Summary

  • Hermetic glass axial construction for environmental stability
  • High breakdown voltage capability for high-power handling
  • Low forward resistance for efficient conduction
  • Isolated case configuration for flexible mounting

RF Diode Applications

  • RF and microwave switching circuits
  • Attenuator control networks
  • High-voltage rectification in specialized systems

RF Diode Procurement Notes

Verify component authenticity through authorized Microchip distributors or direct manufacturer channels. Confirm the specific ordering suffix matches the required package and termination specifications. Ensure compliance with project requirements regarding leaded content and RoHS status, as this part may not be fully compliant with current environmental directives.

RF Diode Selection Notes

Select the HUM2010B when high reliability and hermetic sealing are critical for the application environment. Evaluate the 1000 V breakdown voltage against peak reverse voltage requirements. Consider the 4 pF maximum capacitance for high-frequency performance constraints. Verify that the axial leaded package fits the mechanical design constraints compared to surface-mount alternatives.

RF Diode Part Context

This component belongs to the Microsemi/Microchip PIN diode family, often utilized in defense and aerospace sectors due to its high-reliability designation. The transition from Microsemi to Microchip Technology maintains the product lineage. These devices are typically specified for rugged environments where standard commercial-grade semiconductors may fail.

RF Diode Replacement Considerations

Check for updated Microchip part numbers within the same hermetic PIN diode series. Verify pinout compatibility and electrical parameter equivalence before substitution. Consult official Microchip documentation for any obsolescence notices or recommended new designs.

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