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The HVC300BTRV-E is a silicon variable capacitance diode designed for Very High Frequency (VHF) band applications. It features a nominal junction capacitance of 50 pF with a tight tolerance of 6%. The device operates within a reverse voltage range up to a minimum breakdown voltage of 34 V. It achieves a minimum capacitance ratio of 17, enabling effective tuning capabilities in RF circuits. The component is housed in an SC-79 package, specifically the R-PDSO-F2 outline, containing two terminals.
Verify the specific ordering suffix TRV-E against manufacturer documentation to confirm tape and reel packaging specifications. Ensure the part number matches the exact electrical parameters required for your design, as variations may exist within the product family. Cross-reference the SC-79 package dimensions with your PCB footprint requirements prior to procurement.
Select this component when a fixed 50 pF nominal capacitance with low tolerance is required for VHF applications. The 34 V breakdown voltage rating should be evaluated against the maximum reverse bias voltage in the circuit. Consider the SC-79 package size constraints during layout planning to ensure adequate clearance and soldering compatibility.
This component belongs to the Hitachi (Renesas) discrete semiconductor diode portfolio, specifically categorized under variable capacitance diodes. It is manufactured by Renesas Electronics Corporation, continuing the legacy of Hitachi's semiconductor products. The device serves as a passive component for frequency control in analog and RF signal processing systems.
Consult official substitution lists for equivalent VHF varactors with matching 50 pF nominal capacitance and similar breakdown voltage ratings. Verify pinout compatibility with the SC-79/R-PDSO-F2 package before replacing. Ensure any substitute maintains the minimum 17 capacitance ratio for equivalent performance.