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The HVU383BTRF-E is a single-channel Zener diode manufactured by Renesas Electronics Corporation. It features a nominal Zener voltage of 3.8V and a maximum power dissipation of 200 mW. The device utilizes the URP surface-mount package with two pins, measuring 1.4 x 1.85 x 1.05 mm. Key electrical parameters include a test current of 5 mA, a maximum Zener impedance of 100 Ω, and a maximum reverse leakage current of 120 µA. The typical voltage temperature coefficient is 0.09%/°C, and the maximum operating temperature reaches +150 °C.
Verify the specific ordering suffix and manufacturer part number against official Renesas documentation to ensure component authenticity. Confirm that the URP package dimensions and pinout match your PCB layout requirements before finalizing procurement decisions.
Select this component when a 3.8V reference is needed within a 200 mW power budget. Ensure the design accommodates the 100 Ω impedance limit and 120 µA leakage current specifications under expected operating conditions.
This component belongs to Renesas Electronics' discrete semiconductor portfolio, specifically within the Zener diode category. It serves as a fundamental passive-active hybrid element for voltage control in mixed-signal designs.
Consult official Renesas substitution guides or distributor cross-reference tools for verified equivalent parts. Do not assume functional compatibility based solely on matching voltage ratings without verifying package and thermal characteristics.