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IAUA200N04S5N010ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET_(20V 40V). Review the specifications below when checking this part for your BOM.
The IAUA200N04S5N010ATMA1 is an N-channel enhancement mode OptiMOS™ 5 power MOSFET designed for automotive applications. It features a PG-HSOF-5-1 package with a maximum drain-source voltage of 40 V and a continuous drain current of 200 A at 25°C. The device exhibits a typical on-state resistance of 0.8 mΩ at VGS=10V and supports a junction temperature up to 175°C.
Verify the component status before procurement, as it may be marked as Not Recommended for New Designs (NRND). Confirm that the specific ordering suffix matches the required tape and reel packaging configuration. Ensure compliance with RoHS standards and moisture sensitivity level classifications during storage and handling procedures.
Select this component when low on-resistance and high current capability are required in a compact surface-mount form factor. Consider the thermal resistance characteristics and the specific gate charge requirements for driving circuits. Evaluate the package limitations against the expected peak pulsed currents in the target application environment.
This part belongs to Infineon's OptiMOS™ 5 family, which utilizes advanced silicon technologies to improve efficiency and ruggedness. The series targets the automotive sector by providing enhanced electrical testing and reliability compared to standard industrial counterparts. It serves as a specialized solution for demanding power switching tasks within vehicles.
Check for updated revisions or newer generations within the OptiMOS™ 5 lineup. Verify pin compatibility and thermal performance if substituting with other 40V N-channel MOSFETs in the PG-HSOF-5-1 package.
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