IAUC120N04S6L009ATMA1

Single FETs, MOSFETs Overview

The IAUC120N04S6L009ATMA1 is an OptiMOS™-6 N-channel enhancement mode power MOSFET designed for automotive applications. It features a PG-TDSON-8 package with a maximum drain-source voltage of 40 V and a continuous drain current of 120 A at Tc=25°C. The device exhibits a maximum on-state resistance of 0.9 mΩ at VGS=10V and operates within a temperature range of -55°C to +175°C. Key electrical parameters include a gate threshold voltage of 1.6 V typ, total gate charge of 97 nC typ, and single pulse avalanche energy of 400 mJ.

Single FETs, MOSFETs Feature Summary

• OptiMOS™-6 technology optimized for low conduction losses and high reliability in automotive environments
• AEC-Q101 qualified with 100% avalanche testing for robust performance under transient conditions
• Logic level gate drive capability enabling efficient control from standard microcontroller outputs
• Green product construction compliant with RoHS standards

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• Motor control circuits
• DC-DC converter stages
• Load switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix L009 against official Infineon documentation to ensure correct packaging and marking specifications. Confirm that the component meets the required AEC-Q101 qualification standards for your target automotive application. Cross-reference the thermal resistance values with your PCB layout design to ensure adequate heat dissipation capabilities are maintained during operation.

Single FETs, MOSFETs Selection Notes

Select this component when a 40 V rating is sufficient and low on-resistance is critical for efficiency. The PG-TDSON-8 package offers a compact footprint suitable for space-constrained designs. Ensure the driving circuit can provide the necessary gate voltage to fully enhance the channel and minimize RDS(on). Consider the thermal management requirements given the 175°C operating limit and junction-to-case thermal resistance.

Single FETs, MOSFETs Part Context

This part belongs to the IAUC series of OptiMOS™-6 power transistors. These devices utilize advanced trench gate technology to achieve superior figure-of-merit compared to previous generations. The series is specifically engineered to meet the stringent reliability and quality requirements of the automotive industry, providing a balance of performance, size, and cost-effectiveness for various power switching needs.

Single FETs, MOSFETs Replacement Considerations

Consult Infineon's official cross-reference tools or datasheets for direct replacements. Verify pinout compatibility and electrical parameter equivalence before substitution. Generic equivalents may not meet the specific AEC-Q101 qualification or avalanche ruggedness required for automotive use.