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IAUC120N06S5L015ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET_)40V 60V). Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IAUC120N06S5L015ATMA1
- Description：MOSFET_)40V 60V)
- Series：OptiMOS™ 5
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：235A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.5mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 94µA
- Gate Charge (Qg) (Max) @ Vgs：114 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：8193 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：167W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-43
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for IAUC120N06S5L015ATMA1
Single FETs, MOSFETs Overview
The IAUC120N06S5L015ATMA1 is an OptiMOS™-5 automotive power MOSFET featuring a PG-TDSON-8-43 package. It operates with a drain-source voltage of 60 V and a continuous chip-limited drain current of 235 A. The device exhibits a typical on-state resistance of 1.22 mΩ at VGS=10 V and 1.73 mΩ at VGS=4.5 V. Gate threshold voltage ranges from 1.2 V to 2.2 V, while total gate charge reaches 114 nC maximum. It supports junction temperatures up to 175 °C and includes avalanche testing.
Single FETs, MOSFETs Feature Summary
- OptiMOS™-5 technology designed for automotive applications
- Extended qualification beyond standard AEC-Q101 requirements
- Enhanced electrical testing and robust design specifications
- 100% avalanche tested for reliability
Single FETs, MOSFETs Applications
- General automotive applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm packaging details such as reel dimensions or tape specifications. Ensure that the component meets the required AEC-Q101 standards for your specific automotive environment. Cross-reference the datasheet revision date to confirm technical accuracy before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when a 60 V N-channel enhancement mode MOSFET is required for automotive systems. Consider the low on-state resistance for efficiency in high-current scenarios. Verify compatibility with logic-level driving voltages if utilizing lower gate drive signals. Confirm thermal management capabilities align with the specified junction-to-case thermal resistance values.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS™-5 family of power transistors manufactured by Infineon Technologies. It utilizes silicon technology within a surface-mount PG-TDSON-8-43 package. The series is engineered to provide high reliability and performance for demanding automotive electronic environments requiring robust switching capabilities.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon replacement guides for verified substitutes. Do not assume cross-compatibility based solely on voltage and current ratings without verifying package pinouts and thermal characteristics.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
