IAUC45N04S6L063HATMA1

FET, MOSFET Arrays Overview

The IAUC45N04S6L063H is an OptiMOS™-6 automotive-grade N-channel enhancement-mode logic-level power MOSFET. It features a PG-TDSON-8-57 package with a maximum drain-source voltage of 40 V and a maximum on-state resistance of 6.3 mΩ at VGS=10V. The device supports a continuous drain current of 45 A, operates up to 175°C junction temperature, and is qualified under AEC-Q101 standards.

FET, MOSFET Arrays Feature Summary

• Optimized for half-bridge configurations with low gate charge characteristics
• Logic level operation enabling direct drive from standard microcontrollers
• High thermal stability supporting reliable performance in demanding environments

FET, MOSFET Arrays Applications

• Automotive motor control systems
• Low-side switching applications
• Power distribution units

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure component authenticity through authorized channels and validate datasheet revision status prior to integration into final designs.

FET, MOSFET Arrays Selection Notes

Select this component when designing automotive circuits requiring robust avalanche energy handling and high reliability. The logic-level threshold simplifies driver design, while the compact package facilitates efficient PCB layout for space-constrained modules.

FET, MOSFET Arrays Part Context

This part belongs to the OptiMOS™-6 family, representing advanced silicon technology for automotive power management. It succeeds previous generations by offering improved figure-of-merit metrics within the same footprint, aligning with industry trends toward higher efficiency and miniaturization.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference lists for verified substitutes. Direct replacements must match the PG-TDSON-8-57 package and maintain equivalent electrical ratings to ensure system compatibility without redesign.

FET, MOSFET Arrays FAQ

Is the IAUC45N04S6L063H suitable for high-frequency switching?

Yes, the device exhibits fast switching times and low gate charge, making it appropriate for high-frequency applications typical in modern automotive power electronics.

What is the maximum operating junction temperature?

The component is rated for a maximum junction temperature of 175°C, allowing operation in high-thermal-stress environments.