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IAUC60N04S6L045HATMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 40V 60A 8TDSON. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IAUC60N04S6L045HATMA1
- Description：MOSFET 2N-CH 40V 60A 8TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：60A (Tj)
- Rds On (Max) @ Id, Vgs：4.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2V @ 13µA
- Gate Charge (Qg) (Max) @ Vgs：19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1136pF @ 25V
- Power - Max：52W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PG-TDSON-8-57
- Grade：Automotive
- Qualification：AEC-Q101
FET, MOSFET Arrays datasheet and documents for IAUC60N04S6L045HATMA1
FET, MOSFET Arrays Overview
The IAUC60N04S6L045HATMA1 is an OptiMOS™-6 automotive power MOSFET in a PG-TDSON-8-57 package. It features a 40 V drain-source voltage and a maximum on-state resistance of 4.5 mΩ at VGS=10V. The device supports a continuous drain current of 60 A and a pulsed current of 193 A. It operates within a temperature range of -55°C to +175°C, includes avalanche testing, and meets AEC-Q101 standards.
FET, MOSFET Arrays Feature Summary
- OptiMOS™-6 technology designed for automotive applications
- Logic-level enhancement mode N-channel configuration
- AEC-Q101 qualified with 100% avalanche testing
FET, MOSFET Arrays Applications
- Automotive half-bridge circuits
- Low-side switching applications
- Power management systems requiring high reliability
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm tape-and-reel packaging details. Ensure the component matches the PG-TDSON-8-57 footprint requirements for your PCB layout. Cross-reference the datasheet revision date to confirm the latest electrical characteristics are applied during integration.
FET, MOSFET Arrays Selection Notes
Select this component when a 40 V logic-level N-channel MOSFET is required for automotive environments. The low RDS(on) minimizes conduction losses, while the 175°C operating temperature capability supports robust thermal performance. Verify that the gate charge parameters align with your driver capabilities for optimal switching efficiency.
FET, MOSFET Arrays Part Context
This part belongs to the Infineon OptiMOS™-6 family, which provides advanced power transistor solutions for demanding automotive electronics. The IAUC series specifically targets applications needing high current handling and low on-resistance in compact surface-mount packages.
FET, MOSFET Arrays Replacement Considerations
Consult official Infineon substitution guides for verified alternatives. Do not assume pin-compatible replacements without confirming electrical parameter alignment and package dimensions.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
