FET, MOSFET Arrays IAUC60N04S6N031HATMA1 product image

IAUC60N04S6N031HATMA1

$1.44
  • Description:MOSFET 2N-CH 40V 60A 8TDSON
  • Series:OptiMOS™

SKU:050a97ac3d11 Category: Brand:

  
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IAUC60N04S6N031HATMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 40V 60A 8TDSON. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IAUC60N04S6N031HATMA1

  • Description:MOSFET 2N-CH 40V 60A 8TDSON
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Half Bridge)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:60A (Tj)
  • Rds On (Max) @ Id, Vgs:3.1mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id:3V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs:30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:1922pF @ 25V
  • Power - Max:75W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerVDFN
  • Supplier Device Package:PG-TDSON-8-56
  • Grade:Automotive
  • Qualification:AEC-Q101

FET, MOSFET Arrays datasheet and documents for IAUC60N04S6N031HATMA1

IAUC60N04S6N031HATMA1

FET, MOSFET Arrays Overview

The IAUC60N04S6N031H is an OptiMOS™-6 automotive power MOSFET featuring a half-bridge N-channel enhancement mode design. It operates with a maximum drain-source voltage of 40 V and a continuous drain current of 60 A at 25 °C. The device exhibits a maximum on-state resistance of 3.1 mΩ at VGS=10V and 2.4 mΩ at VGS=7V. Total gate charge reaches 30 nC, while the junction-to-case thermal resistance is 2.0 K/W. It supports a 175 °C operating temperature range and includes avalanche testing.

FET, MOSFET Arrays Feature Summary

  • OptiMOS™-6 technology optimized for automotive applications
  • AEC-Q101 qualified with 100% avalanche testing
  • Enhancement mode normal level operation
  • MSL1 rated up to 260°C peak reflow

FET, MOSFET Arrays Applications

  • Automotive half-bridge circuits
  • Low-side switching in vehicle electronics
  • Power management modules requiring high reliability

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against Infineon's official documentation to confirm packaging details such as tape-and-reel specifications. Confirm RoHS compliance status and ensure the component meets the required automotive quality standards before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring low conduction losses and robust thermal performance in automotive environments. Ensure the driving circuit provides sufficient gate voltage to achieve the desired RDS(on) levels. Evaluate PCB layout requirements to maintain the specified thermal resistance values under actual operating conditions.

FET, MOSFET Arrays Part Context

This part belongs to the OptiMOS™-6 family, designed specifically for demanding automotive power switching applications. It utilizes advanced trench technology to deliver high efficiency and reliability within a compact PG-TDSON-8 package suitable for surface-mount assembly.

FET, MOSFET Arrays Replacement Considerations

Consult Infineon's official cross-reference tools or datasheets for verified alternative part numbers. Do not substitute based solely on electrical parameters without confirming package compatibility and automotive qualification status.

IAUC60N04S6N031HATMA1IAUC60N04S6N031HATMA1
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