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IAUCN10S7N074ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IAUCN10S7N074ATMA1. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IAUCN10S7N074ATMA1
- Description：IAUCN10S7N074ATMA1
- Series：OptiMOS™ 7
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：78A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：7V, 10V
- Rds On (Max) @ Id, Vgs：7.4mOhm @ 39A, 10V
- Vgs(th) (Max) @ Id：3.2V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs：27.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1950 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：96W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-34
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for IAUCN10S7N074ATMA1
Single FETs, MOSFETs Overview
The IAUCN10S7N074ATMA1 is a single N-channel power MOSFET from Infineon Technologies, belonging to the OptiMOS 7 series. It utilizes silicon technology and features an SMD/SMT installation style within a PG-TDSON-8 package. The device supports a drain-source voltage of 100 V and delivers a continuous drain current of 76 A at 25°C. Its maximum on-resistance is specified at 7.4 mΩ, with a gate-source voltage rating of ±20 V. The component operates reliably across a temperature range of -55°C to +175°C junction temperature.
Single FETs, MOSFETs Feature Summary
- OptiMOS 7 trench technology for high efficiency
- Automotive grade reliability certified to AEC-Q101
- Enhanced thermal performance via top-side cooling
Single FETs, MOSFETs Applications
- Automotive traction inverters
- Electric vehicle charging systems
- High-current DC-DC converters
Single FETs, MOSFETs Procurement Notes
Verify the exact part number against official Infineon documentation before procurement. Confirm that the suffix matches the specific tape-and-reel packaging requirements. Ensure the component meets the required automotive quality standards for your specific application environment. Cross-reference the datasheet revision date to ensure compatibility with your design specifications.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring robust N-channel switching in automotive environments. The OptiMOS 7 technology offers low conduction losses suitable for high-current scenarios. Consider the PG-TDSON-8 package for compact designs needing efficient heat dissipation. Verify that the 100V rating aligns with your system's voltage headroom requirements.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS 7 family, designed specifically for demanding automotive applications. The series emphasizes high reliability and low on-resistance. It represents a newer generation of silicon MOSFETs optimized for electric mobility and powertrain systems. The component integrates advanced trench gate technology for improved switching characteristics.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon substitution guides for verified alternatives. Ensure any replacement maintains the same package type and electrical ratings. Verify that substitute parts meet the same automotive qualification standards.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
