IAUTN08S5N012LATMA1

FET, MOSFET Arrays Overview

The IAUTN08S5N012LATMA1 is an OptiMOS™ 5 automotive power MOSFET featuring an 80 V drain-source breakdown voltage and a maximum on-state resistance of 1.15 mΩ at 10 V gate drive. It integrates two N-channel enhancement-mode FETs within a single PG-HSOF-8-2 package: a Linear FET (LINFET) with enhanced safe operating area for linear operation, and a low RDS(on) FET (ONFET). The device supports a continuous drain current of 410 A and operates across a junction temperature range from -55 °C to +175 °C.

FET, MOSFET Arrays Feature Summary

• Dual-gate architecture integrating a Linear FET for robust linear operation and a Low RDS(on) FET for high-efficiency switching.
• Extended qualification beyond standard automotive requirements with enhanced electrical testing protocols.
• Dedicated independent gate pins for both the LINFET and ONFET to allow distinct control strategies.
• 100% avalanche tested with MSL1 rating supporting up to 260°C peak reflow temperatures.

FET, MOSFET Arrays Applications

• Power distribution and battery management systems including electronic fuses and disconnect switches
• In-rush current limitation for capacitor charging and motor surge current control
• Slow switching applications to minimize voltage transients and electromagnetic interference
• Drain-source voltage clamping for dissipation of inductive energy and over-voltage protection

FET, MOSFET Arrays Procurement Notes

Verify component authenticity by cross-referencing the marking code '5N0812L' against official Infineon documentation. Confirm that the ordering suffix LATMA1 corresponds to the specific packaging configuration required for your assembly line. Ensure compliance with RoHS standards and check for any specific automotive quality certifications mandated by your system design before finalizing procurement.

FET, MOSFET Arrays Selection Notes

Select this component when designs require simultaneous high-current switching and robust linear mode capability within a compact footprint. The dual-gate structure allows optimization of switching speed via the ONFET while utilizing the LINFET for controlled ramp-up or fault handling. Consider the thermal resistance characteristics and PCB layout requirements to maximize the 175°C operating temperature capability.

FET, MOSFET Arrays Part Context

This part belongs to the OptiMOS™ 5 family designed specifically for demanding automotive environments. It utilizes silicon technology to deliver high power density in the PG-HSOF-8-2 package. The series is engineered to meet rigorous automotive reliability standards, offering improved performance metrics compared to previous generations while maintaining compatibility with standard surface-mount assembly processes.

FET, MOSFET Arrays Replacement Considerations

Consult official Infineon replacement guides for verified substitutes. Generic equivalents may not replicate the specific dual-gate linear switching characteristics or the extended automotive qualification levels inherent to this OptiMOS™ 5 device.

FET, MOSFET Arrays FAQ

What is the functional difference between the LINFET and ONFET in this package?

The LINFET is optimized for linear operation with an enhanced Safe Operating Area (SOA), suitable for current limiting and slow switching. The ONFET provides minimal on-state resistance for efficient high-speed power switching.

How are the gates controlled in the IAUTN08S5N012L?

The device features dedicated gate pins for both the LINFET and the ONFET, allowing them to be driven independently rather than being internally shorted together.

Is this component qualified for automotive use?

Yes, it is qualified according to AEC-Q101 and includes extended qualification beyond the standard requirements for automotive applications.