IAUZ18N10S5L420ATMA1

$1.09

Description：MOSFET N-CH 100V 18A TSDSON-8-32
Series：OptiMOS™ 5
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:54eedc4dedd7 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IAUZ18N10S5L420ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 18A TSDSON-8-32. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IAUZ18N10S5L420ATMA1

Description：MOSFET N-CH 100V 18A TSDSON-8-32
Series：OptiMOS™ 5
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：42mOhm @ 9A, 10V
Vgs(th) (Max) @ Id：2.2V @ 8µA
Gate Charge (Qg) (Max) @ Vgs：8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：470 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：30W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8-32
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for IAUZ18N10S5L420ATMA1

IAUZ18N10S5L420ATMA1

Single FETs, MOSFETs Overview

The IAUZ18N10S5L420ATMA1 is an OptiMOS™-5 N-channel enhancement mode power MOSFET designed for automotive applications. It features a PG-TSDSON-8 package with a drain-source breakdown voltage of 100 V and a maximum on-state resistance of 42 mΩ at VGS=10V. The device supports a continuous drain current of 18 A at 25°C, operates up to 175°C junction temperature, and withstands a pulsed drain current of 72 A. Total gate charge is typically 5.4 nC.

Single FETs, MOSFETs Feature Summary

OptiMOS™-5 technology optimized for automotive environments
AEC Q101 qualified with 100% avalanche testing
Logic-level gate drive capability
Green product compliant with RoHS standards

Single FETs, MOSFETs Applications

Automotive low-side switching
Motor control circuits
Lighting applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure component authenticity through authorized distribution channels. Cross-reference the datasheet revision date (July 2019) to validate technical parameters before integration into designs.

Single FETs, MOSFETs Selection Notes

Select this component for high-reliability automotive systems requiring robust avalanche performance. The logic-level threshold simplifies driver requirements. Evaluate thermal management needs based on the specified junction-to-case thermal resistance and operating temperature range when designing PCB layouts.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS™-5 family, representing advanced silicon carbide gate trench technology. It targets demanding automotive markets where reliability under harsh conditions is critical. The PG-TSDSON-8 package provides efficient thermal dissipation in a compact footprint suitable for space-constrained electronic modules.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Do not assume pin-compatible replacements without confirming electrical parameter alignment and package dimensions.