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IDW15G120C5BFKSA1 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE ARRAY SIC 1200V TO247-3-41. Review the specifications below when checking this part for your BOM.
Diode Arrays specifications for IDW15G120C5BFKSA1
- Description：DIODE ARRAY SIC 1200V TO247-3-41
- Series：CoolSiC™+
- Mfr：Infineon Technologies
- Package：Tube
- Diode Configuration：1 Pair Common Cathode
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io) (per Diode)：24A (DC)
- Voltage - Forward (Vf) (Max) @ If：1.6 V @ 7.5 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：62 µA @ 1200 V
- Operating Temperature - Junction：-55°C ~ 175°C
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：PG-TO247-3-41
- Grade：-
- Qualification：-
Diode Arrays datasheet and documents for IDW15G120C5BFKSA1
Diode Arrays Overview
The Infineon IDW15G120C5BFKSA1 is a dual anode common cathode Silicon Carbide Schottky diode in the PG-TO247-3 package. It features a 1200 V repetitive peak reverse voltage and a continuous forward current of 15 A per leg at 25°C case temperature. The device exhibits a maximum forward voltage of 1.65 V at 15 A and 25°C, with a surge current capability of 170 A. Operating temperatures range from -55°C to +175°C.
Diode Arrays Feature Summary
- Silicon Carbide construction eliminates reverse recovery current and forward recovery effects.
- Temperature independent switching behavior ensures consistent performance across operating ranges.
- Specified dv/dt ruggedness allows robust operation under high voltage transient conditions.
- Extended surge current capability supports reliable diode operation during overload events.
Diode Arrays Applications
- Solar inverters
- Uninterruptable power supplies
- Motor drives
- Power Factor Correction
Diode Arrays Procurement Notes
Verify the specific ordering suffix against official documentation to confirm pin configuration and packaging details. Ensure thermal management designs account for the specified junction-to-case thermal resistance values. Confirm that application requirements align with the non-automotive qualification status stated in the datasheet disclaimer.
Diode Arrays Selection Notes
Select this component for applications requiring high-frequency switching and reduced electromagnetic interference compared to silicon alternatives. Consider the dual anode common cathode configuration for bridge rectifier or synchronous rectification topologies. Evaluate thermal constraints based on the specified power dissipation limits and ambient operating conditions.
Diode Arrays Part Context
This device belongs to the 5th Generation CoolSiC™ product family from Infineon Technologies. It utilizes advanced silicon carbide semiconductor material to achieve superior electrical characteristics compared to traditional silicon diodes. The series is designed specifically for industrial power control applications demanding high efficiency and reliability.
Diode Arrays Replacement Considerations
Consult official Infineon documentation for verified substitute part numbers within the same CoolSiC™ portfolio. Cross-reference specifications such as forward voltage, reverse voltage, and package dimensions before implementation.
Explore related parts through Rectifiers, Diodes, Discrete Semiconductor Products, all product categories.
