Diode Arrays IDW30C65D1XKSA1 product image

IDW30C65D1XKSA1

$2.86
  • Description:DIODE ARR GP 650V 15A TO247-3-1
  • Series:Rapid 1

SKU:c73f3eae4954 Category: Brand:

  
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IDW30C65D1XKSA1 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE ARR GP 650V 15A TO247-3-1. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for IDW30C65D1XKSA1

  • Description:DIODE ARR GP 650V 15A TO247-3-1
  • Series:Rapid 1
  • Mfr:Infineon Technologies
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):650 V
  • Current - Average Rectified (Io) (per Diode):15A
  • Voltage - Forward (Vf) (Max) @ If:1.7 V @ 15 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):71 ns
  • Current - Reverse Leakage @ Vr:40 µA @ 650 V
  • Operating Temperature - Junction:-40°C ~ 175°C
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:PG-TO247-3-1
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for IDW30C65D1XKSA1

IDW30C65D1XKSA1

Diode Arrays Overview

The IDW30C65D1XKSA1 is a Rapid Switching Emitter Controlled Diode from the Common Cathode Series. It features a 650 V repetitive peak reverse voltage and two independent legs, each rated for a maximum forward current of 30 A at 25°C case temperature. The device operates with a typical forward voltage of 1.35 V at 25°C and supports junction temperatures up to 175°C. Key dynamic parameters include a maximum reverse recovery charge of 0.37 µC and a peak reverse recovery current of 8.6 A under standard inductive load conditions.

Diode Arrays Feature Summary

  • Utilizes 650V Emitter Controlled technology for stable parameter behavior across temperature ranges.
  • Features ultra-fast recovery characteristics with low reverse recovery charge and current.
  • Designed for high-temperature operation with a maximum junction temperature of 175°C.

Diode Arrays Applications

  • AC/DC converters
  • Boost diode in PFC stages
  • Free wheeling diodes in inverters and motor drives
  • General purpose inverters
  • Switch mode power supplies

Diode Arrays Procurement Notes

Verify the specific ordering suffix XKSA1 against official Infineon documentation to confirm package type and compliance details. Ensure that the component meets JEDEC qualification standards required for the target application environment. Cross-reference thermal resistance values during design to maintain safe operating limits within the specified junction temperature range.

Diode Arrays Selection Notes

Select this component for applications requiring common cathode topology with dual independent legs. Evaluate thermal management requirements based on the junction-to-case thermal resistance of 1.64 K/W per leg. Consider the forward current derating curve when designing for case temperatures exceeding 25°C to ensure reliability within the 175°C maximum junction limit.

Diode Arrays Part Context

This part belongs to the Emitter Controlled Diode Rapid 1 Common Cathode Series manufactured by Infineon Technologies. It is designed for industrial power control applications where fast switching and low conduction losses are critical. The PG-TO247-3 package facilitates through-hole mounting with backside cathode connection for efficient heat dissipation.

Diode Arrays Replacement Considerations

IDW30E65D1

Diode Arrays FAQ

What is the pin configuration for the IDW30C65D1?

Pin 1 is Anode (A1), Pin 2 and the backside are Cathode (C), and Pin 3 is Anode (A2).

Does the device support operation at elevated temperatures?

Yes, the device supports an operating junction temperature range from -40°C to +175°C.

What is the maximum surge non-repetitive forward current?

The maximum surge non-repetitive forward current (IFSM) is 120 A for a duration of 10.0 ms at a case temperature of 25°C.

IDW30C65D1XKSA1IDW30C65D1XKSA1
$2.86
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