SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
IDW30C65D1XKSA1 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE ARR GP 650V 15A TO247-3-1. Review the specifications below when checking this part for your BOM.
The IDW30C65D1XKSA1 is a Rapid Switching Emitter Controlled Diode from the Common Cathode Series. It features a 650 V repetitive peak reverse voltage and two independent legs, each rated for a maximum forward current of 30 A at 25°C case temperature. The device operates with a typical forward voltage of 1.35 V at 25°C and supports junction temperatures up to 175°C. Key dynamic parameters include a maximum reverse recovery charge of 0.37 µC and a peak reverse recovery current of 8.6 A under standard inductive load conditions.
Verify the specific ordering suffix XKSA1 against official Infineon documentation to confirm package type and compliance details. Ensure that the component meets JEDEC qualification standards required for the target application environment. Cross-reference thermal resistance values during design to maintain safe operating limits within the specified junction temperature range.
Select this component for applications requiring common cathode topology with dual independent legs. Evaluate thermal management requirements based on the junction-to-case thermal resistance of 1.64 K/W per leg. Consider the forward current derating curve when designing for case temperatures exceeding 25°C to ensure reliability within the 175°C maximum junction limit.
This part belongs to the Emitter Controlled Diode Rapid 1 Common Cathode Series manufactured by Infineon Technologies. It is designed for industrial power control applications where fast switching and low conduction losses are critical. The PG-TO247-3 package facilitates through-hole mounting with backside cathode connection for efficient heat dissipation.
IDW30E65D1
Pin 1 is Anode (A1), Pin 2 and the backside are Cathode (C), and Pin 3 is Anode (A2).
Yes, the device supports an operating junction temperature range from -40°C to +175°C.
The maximum surge non-repetitive forward current (IFSM) is 120 A for a duration of 10.0 ms at a case temperature of 25°C.
Explore related parts through Rectifiers, Diodes, Discrete Semiconductor Products, all product categories.