IF1320ST3

IF1320ST3

$4.42
  • Description:JFET N-Channel -20V Low Noise
  • Series:IF1320

SKU:21559375adab Category: Brand:

  
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Product Detailed Parameters

  • Description:JFET N-Channel -20V Low Noise
  • Series:IF1320
  • Mfr:InterFET
  • Package:Strip
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):-
  • Drain to Source Voltage (Vdss):20 V
  • Current - Drain (Idss) @ Vds (Vgs=0):10 mA @ 10 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:1.1 V @ 0.5 nA
  • Input Capacitance (Ciss) (Max) @ Vds:15pF @ 10V
  • Resistance - RDS(On):50 Ohms
  • Power - Max:350 mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-3
  • Supplier Device Package:SOT-23-3
  • Grade:-
  • Qualification:-

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IF1320ST3

Overview

The IF1320ST3 is an N-channel JFET in a SOT-23 surface-mount package. It features a gate-to-source breakdown voltage of -20 V and a drain-to-source saturation current (IDSS) ranging from 5 mA to 20 mA at VDS = 10 V. The device exhibits a typical forward transconductance of 22 mS and an input noise voltage of 1.0 nV/√Hz. Maximum continuous power dissipation is 350 mW, with an operating junction temperature range of -55°C to 150°C.

Feature Summary

  • Low noise performance with high gain for sensitive signal processing
  • High radiation tolerance suitable for demanding environments
  • Ultra-low gate leakage current for precision applications
  • Low cutoff voltage ideal for low-voltage supply designs

Applications

  • Amplifiers
  • Radar systems
  • Medical imaging equipment
  • Oscillators
  • Satellite communications

Procurement Notes

Verify the specific ordering suffix against official InterFET documentation to confirm packaging type. The ST3 suffix indicates bulk SOT-23 packaging, distinct from tape-and-reel options. Confirm RoHS compliance status directly with the manufacturer or authorized distributor prior to procurement.

Selection Notes

Select this component when low noise and high radiation tolerance are required in a compact SMT form factor. Ensure the IDSS range of 5 mA to 20 mA aligns with circuit biasing requirements. Verify that the -20 V gate-source breakdown voltage meets the maximum operational limits of the target application.

Part Context

The IF1320 series represents InterFET's flagship low-noise N-channel JFET lineup. The IF1320ST3 specifically denotes the surface-mount variant housed in a SOT-23 case. This part serves as a direct replacement for legacy industry-standard discrete JFETs while offering superior radiation hardness and lower leakage characteristics.

Replacement Considerations

Officially documented cross-reference parts include 2SK152, 2SK170, 2N6451, 2N6452, 2N3972, 2N4393, NSVJ3557SA3, NSVJ5908DSG5, NSVJ2394SA3, and MMBF4393L. Verify pinout compatibility and electrical parameter margins before substitution.

FAQ

Are the source and drain pins interchangeable?

Yes, the datasheet notes that the Source and Drain (S/D) pins are interchangeable.

What is the typical gate leakage current?

The typical gate leakage current is 750 fA at 10 V.

Does the IF1320 support custom binning?

Yes, custom test and binning options are available for this component.

IF1320ST3IF1320ST3
$4.42
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