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The IF1320ST3 is an N-channel JFET in a SOT-23 surface-mount package. It features a gate-to-source breakdown voltage of -20 V and a drain-to-source saturation current (IDSS) ranging from 5 mA to 20 mA at VDS = 10 V. The device exhibits a typical forward transconductance of 22 mS and an input noise voltage of 1.0 nV/√Hz. Maximum continuous power dissipation is 350 mW, with an operating junction temperature range of -55°C to 150°C.
Verify the specific ordering suffix against official InterFET documentation to confirm packaging type. The ST3 suffix indicates bulk SOT-23 packaging, distinct from tape-and-reel options. Confirm RoHS compliance status directly with the manufacturer or authorized distributor prior to procurement.
Select this component when low noise and high radiation tolerance are required in a compact SMT form factor. Ensure the IDSS range of 5 mA to 20 mA aligns with circuit biasing requirements. Verify that the -20 V gate-source breakdown voltage meets the maximum operational limits of the target application.
The IF1320 series represents InterFET's flagship low-noise N-channel JFET lineup. The IF1320ST3 specifically denotes the surface-mount variant housed in a SOT-23 case. This part serves as a direct replacement for legacy industry-standard discrete JFETs while offering superior radiation hardness and lower leakage characteristics.
Officially documented cross-reference parts include 2SK152, 2SK170, 2N6451, 2N6452, 2N3972, 2N4393, NSVJ3557SA3, NSVJ5908DSG5, NSVJ2394SA3, and MMBF4393L. Verify pinout compatibility and electrical parameter margins before substitution.
Yes, the datasheet notes that the Source and Drain (S/D) pins are interchangeable.
The typical gate leakage current is 750 fA at 10 V.
Yes, custom test and binning options are available for this component.