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The IF140AST3TR is an N-Channel Junction Field-Effect Transistor (JFET) manufactured by InterFET, utilizing the proprietary N0014L geometry. It is housed in a surface-mount SOT-23 package and supplied on a tape and reel. Key electrical characteristics include a gate-to-source breakdown voltage of -20V, a typical gate leakage current of 100fA at 10V, and an input capacitance of 3pF. The device exhibits a typical noise voltage of 3.0 nV/√Hz, a forward transconductance of 3.8mS, and a cutoff voltage of -3.0V. The drain-to-source saturation current ranges from 5mA to 15mA, with a maximum operating junction temperature of 150°C.
Verify the specific suffix 'TR' indicates tape and reel packaging when ordering. Confirm that the 'A' designation corresponds to the IF140A variant specifications rather than the standard IF140. Ensure compatibility with SOT-23 land patterns and check for any custom binning requirements if specific parameter tightness is needed for the application.
Select this component for designs requiring minimal gate leakage and low noise figures at higher frequencies. Compare the -20V breakdown rating against circuit voltage peaks. Consider the SOT-23 thermal derating limits if operating near the maximum junction temperature. Verify that the 3.8mS transconductance meets the gain requirements of the target amplifier stage.
This part belongs to the IF140 family of N-Channel JFETs. It serves as a surface-mount alternative to through-hole variants like the TO-72 package. The product line targets military, aerospace, and medical sectors where reliability and low noise are critical. It is positioned as a low-leakage mid-gain solution within InterFET's portfolio.
Official industry standard cross-references include BF512, SST4416, MMBF4416, MMBF5485, and SSTJ211. Similar parts listed by the manufacturer include IFBF512, 2N4416, J304, 2N4303, and SMPJ211. Verify pinout compatibility and electrical parameter overlaps before substitution.
Yes, the datasheet notes that the Source and Drain (S/D) pins are interchangeable.
The typical gate leakage current is 100fA at 10V.
Yes, InterFET provides edge case SPICE modeling for this device.