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Product Detailed Parameters
- Description：JFET N-Channel -30V Low Noise
- Series：IF170
- Mfr：InterFET
- Package：Strip
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：30 V
- Current - Drain (Idss) @ Vds (Vgs=0)：7 mA @ 10 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：800 mV @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：15pF @ 10V
- Resistance - RDS(On)：50 Ohms
- Power - Max：350 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The InterFET IF170BST3 is an N-channel JFET utilizing the InterFET N0132L geometry, housed in a surface-mount SOT-23 package. It features a -30V reverse gate-source voltage rating and a typical transconductance of 22mS at VDS=15V, ID=1mA. The device exhibits low noise with a typical input voltage of 1.0 nV/√Hz at 1kHz. Static characteristics include a gate-to-source breakdown voltage of -30V and a drain-to-source saturation current ranging from 6.0 to 12.0 mA for the 'B' bin. Dynamic parameters specify an input capacitance of 20 pF and reverse transfer capacitance of 4.5 pF at 1MHz.
Feature Summary
- Utilizes InterFET N0132L geometry for high radiation tolerance
- Provides low noise performance suitable for sensitive amplifier stages
- Offers high gain characteristics with typical transconductance of 22mS
- Features extremely low gate leakage current
Applications
- Radar systems and military communications equipment
- Satellite and missile guidance subsystems
- Hydrophone preamplifiers and medical imaging systems
- Audio tone control circuits and electret microphone interfaces
Procurement Notes
Verify the specific binning suffix (A, B, C, or D) required for your design, as the IF170BST3 denotes the 'B' bin with specific IDSS ranges. Confirm packaging preferences, as bulk SOT-23 units are available alongside tape and reel options. Ensure compliance with RoHS, REACH, and CMR standards during procurement. Check for custom test requirements if standard binning does not meet strict circuit tolerances.
Selection Notes
Select the IF170BST3 when low noise and high gain are critical for mid-frequency amplifier designs. Compare against industry standard crosses like the 2SK170 or 2N6452 for compatibility. Consider the IF389x dual matched option if paired devices are needed. Evaluate thermal derating factors for the SOT-23 package, which has a continuous power dissipation limit of 350 mW.
Part Context
The IF170BST3 belongs to the IF170A-B-C-D series of N-channel JFETs designed for sensitive amplifier applications. This series offers various binning options to tailor drain-to-source saturation currents. InterFET provides multiple package formats including TO-72, TO-92, and SOT-23, along with bare die options for specialized integration.
Replacement Considerations
Publicly documented industry standard cross-compatibility includes the 2SK152, 2SK170, 2N6451, 2N6452, 2N3972, MMBF4393, NSVJ3557SA3, NSVJ5908DSG5, and NSVJ2394SA3. Verify pinout compatibility and electrical parameter margins before substitution.
