IF170CST3

IF170CST3

$4.77
  • Description:JFET N-Channel -30V Low Noise
  • Series:IF170

SKU:e41cf86707c6 Category: Brand:

  
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Product Detailed Parameters

  • Description:JFET N-Channel -30V Low Noise
  • Series:IF170
  • Mfr:InterFET
  • Package:Strip
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):-
  • Drain to Source Voltage (Vdss):30 V
  • Current - Drain (Idss) @ Vds (Vgs=0):14 mA @ 10 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:1.2 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds:15pF @ 10V
  • Resistance - RDS(On):42 Ohms
  • Power - Max:350 mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-3
  • Supplier Device Package:SOT-23-3
  • Grade:-
  • Qualification:-

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IF170CST3

Overview

The IF170CST3 is an N-channel JFET from the InterFET IF170A-B-C-D series, housed in a surface-mount SOT-23 package. It features a -30V reverse gate-source voltage rating and operates within a junction temperature range of -55°C to +150°C. The device exhibits a typical noise voltage of 1.0 nV/√Hz at 1kHz and a typical transconductance of 6 mS under standard test conditions. Static characteristics include a gate-to-source cutoff voltage ranging from -0.2V to -2.0V and a drain-to-source saturation current between 10.0 mA and 20.0 mA. Dynamic parameters specify an input capacitance of 20 pF and a reverse transfer capacitance of 4.5 pF.

Feature Summary

  • Utilizes InterFET N0132L geometry for high radiation tolerance
  • Provides low noise performance suitable for sensitive amplifier stages
  • Offers high gain with typical transconductance of 22mS
  • Features extremely low gate leakage current

Applications

  • Radar systems and military communications equipment
  • Satellite and missile guidance subsystems
  • Hydrophone preamplifiers and medical imaging systems
  • General-purpose oscillators and signal mixers

Procurement Notes

Verify component authenticity through authorized InterFET distributors or certified supply chain partners. Confirm RoHS, REACH, and CMR compliance status prior to integration. Ensure proper ESD handling protocols are followed during storage and assembly, as specified in JEDEC standards. Validate packaging integrity for bulk or tape-and-reel configurations before production use.

Selection Notes

Select the IF170CST3 variant based on required IDSS binning ranges, specifically targeting the 10.0 mA to 20.0 mA saturation current window. Consider thermal derating requirements when designing for continuous power dissipation limits in the SOT-23 package. Evaluate source-drain interchangeability if pinout flexibility is needed in the PCB layout design.

Part Context

This component belongs to the IF170A-B-C-D family of N-channel silicon JFETs designed for mid-frequency sensitive amplifier applications. The 'C' designation indicates specific electrical binning for drain-to-source saturation current compared to the A, B, and D variants. The 'ST3' suffix denotes the SOT-23 surface-mount package configuration available in bulk or reel formats.

Replacement Considerations

Industry standard cross-compatibility includes 2SK152, 2SK170, 2N6451, 2N6452, 2N3972, and MMBF4393. Alternative options from other manufacturers include NSVJ3557SA3, NSVJ5908DSG5, and NSVJ2394SA3. Verify pinout compatibility and electrical parameter tolerances before substituting.

IF170CST3IF170CST3
$4.77
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