IF170DST3

IF170DST3

$4.55
  • Description:JFET N-Channel -30V Low Noise
  • Series:IF170

SKU:21b986d57682 Category: Brand:

  
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Product Detailed Parameters

  • Description:JFET N-Channel -30V Low Noise
  • Series:IF170
  • Mfr:InterFET
  • Package:Strip
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):-
  • Drain to Source Voltage (Vdss):30 V
  • Current - Drain (Idss) @ Vds (Vgs=0):22 mA @ 10 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:1.5 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds:15pF @ 10V
  • Resistance - RDS(On):38 Ohms
  • Power - Max:350 mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-3
  • Supplier Device Package:SOT-23-3
  • Grade:-
  • Qualification:-

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IF170DST3

Overview

The InterFET IF170DST3 is an N-channel JFET utilizing the InterFET N0132L geometry, housed in a surface-mount SOT-23 package. It features a -30V reverse gate-source voltage rating and a continuous power dissipation of 350 mW at 25°C. The device exhibits a typical transconductance of 6 mS (at VDS=15V, ID=1mA) with a maximum full forward transconductance of 14 mS. Static characteristics include a gate-to-source cutoff voltage range of -0.2V to -2.0V and a drain-to-source saturation current ranging from 18.0 mA to 30.0 mA. Dynamic parameters specify an input capacitance of 20 pF and a reverse transfer capacitance of 4.5 pF at 1 MHz.

Feature Summary

  • Utilizes InterFET N0132L geometry for high radiation tolerance
  • Provides low noise performance with a typical voltage noise of 1.0 nV/√Hz
  • Features extremely low gate leakage current of 750 fA typical at 10V
  • Supports edge case SPICE modeling via InterFET SPICE models

Applications

  • Radar systems and satellite communications
  • Missiles guidance and hydrophone preamplifiers
  • Medical imaging systems and ultrasound equipment
  • Electret microphone circuits and audio filters

Procurement Notes

Verify the specific suffix 'ST3' confirms the SOT-23 surface mount package configuration. Confirm compliance requirements such as RoHS and REACH status directly with the manufacturer or authorized distributors. Ensure ESD handling protocols are followed during storage and assembly, as the component is sensitive to electrostatic discharge.

Selection Notes

Select the IF170DST3 when a higher drain-to-source saturation current range (18.0 mA to 30.0 mA) is required compared to other variants in the IF170 family. Consider the SOT-23 package constraints regarding thermal derating and power dissipation limits. Evaluate the need for high radiation tolerance if operating in aerospace or military environments.

Part Context

The IF170DST3 belongs to the IF170A-B-C-D series of N-channel JFETs designed for sensitive amplifier stages in mid-frequency applications. This series offers various binning options for different electrical characteristics and supports multiple packaging formats including through-hole TO-72, TO-92, and bare die configurations.

Replacement Considerations

Publicly documented industry standard cross-references include the 2SK152, 2SK170, 2N6451, 2N6452, 2N3972, and MMBF4393. Alternative parts from other manufacturers listed are NSVJ3557SA3, NSVJ5908DSG5, and NSVJ2394SA3. Verify pinout compatibility and electrical parameter overlaps before substitution.

IF170DST3IF170DST3
$4.55
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