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The InterFET IF170DST3 is an N-channel JFET utilizing the InterFET N0132L geometry, housed in a surface-mount SOT-23 package. It features a -30V reverse gate-source voltage rating and a continuous power dissipation of 350 mW at 25°C. The device exhibits a typical transconductance of 6 mS (at VDS=15V, ID=1mA) with a maximum full forward transconductance of 14 mS. Static characteristics include a gate-to-source cutoff voltage range of -0.2V to -2.0V and a drain-to-source saturation current ranging from 18.0 mA to 30.0 mA. Dynamic parameters specify an input capacitance of 20 pF and a reverse transfer capacitance of 4.5 pF at 1 MHz.
Verify the specific suffix 'ST3' confirms the SOT-23 surface mount package configuration. Confirm compliance requirements such as RoHS and REACH status directly with the manufacturer or authorized distributors. Ensure ESD handling protocols are followed during storage and assembly, as the component is sensitive to electrostatic discharge.
Select the IF170DST3 when a higher drain-to-source saturation current range (18.0 mA to 30.0 mA) is required compared to other variants in the IF170 family. Consider the SOT-23 package constraints regarding thermal derating and power dissipation limits. Evaluate the need for high radiation tolerance if operating in aerospace or military environments.
The IF170DST3 belongs to the IF170A-B-C-D series of N-channel JFETs designed for sensitive amplifier stages in mid-frequency applications. This series offers various binning options for different electrical characteristics and supports multiple packaging formats including through-hole TO-72, TO-92, and bare die configurations.
Publicly documented industry standard cross-references include the 2SK152, 2SK170, 2N6451, 2N6452, 2N3972, and MMBF4393. Alternative parts from other manufacturers listed are NSVJ3557SA3, NSVJ5908DSG5, and NSVJ2394SA3. Verify pinout compatibility and electrical parameter overlaps before substitution.