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The InterFET IF4500ST3TR is an N-Channel Junction Field Effect Transistor (JFET) housed in a surface-mount SOT-23 package. It utilizes the proprietary InterFET N0450L geometry to achieve low noise and high gain characteristics suitable for precision analog applications. Key electrical parameters include a gate-to-source breakdown voltage of -20V, a typical forward transconductance of 65mS, and a typical drain-to-source saturation current of 30mA at VGS=0V. The device features a low gate leakage current of 1.5pA and operates within a junction temperature range of -55°C to 150°C.
Verify the specific suffix TR against official documentation to confirm tape and reel packaging specifications. Confirm that the ordering part number matches the required case style and binning options. Ensure compliance requirements such as RoHS and REACH are validated for the intended deployment environment before finalizing procurement orders.
Select this component when low input noise voltage and high transconductance are critical design constraints. The SOT-23 form factor supports automated surface mount assembly processes. Consider the -20V gate-source rating and low VGS(OFF) characteristics for compatibility with low-voltage power supplies and precise biasing requirements.
This component belongs to the IF4500 series of N-Channel JFETs manufactured by InterFET. The ST3 suffix indicates the SOT-23 surface mount package variant, while the TR suffix denotes the tape and reel packaging configuration. This series is engineered to replace legacy industry standard discrete transistors in modern electronic designs.
Officially documented cross-references include J110, J110A, 2SK363, and MMBFJ110. Similar parts within the manufacturer's portfolio include IF4510, IF4520, and SMPJ110. Verify pinout compatibility and thermal derating curves when substituting these components in existing circuit layouts.
Yes, the datasheet notes that the Source/Drain (S/D) pins are interchangeable.
The typical equivalent input noise voltage is 0.85 nV/√Hz measured at VDS = 4V and ID = 5mA.
Yes, the InterFET proprietary JFET recipes result in high radiation tolerance compared to standard silicon devices.