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Product Detailed Parameters
- Description：IGBT MOD 1200V 600A 20MW
- Series：MIPAQ™
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：Trench Field Stop
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 300A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：600 A
- Power - Max：-
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：18.5 nF @ 25 V
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Overview
The IFF300B12N2E4P_B11 is a MIPAQ base module integrating Trench/Fieldstop IGBT4 and an Emitter Controlled Diode. It features PressFIT terminals and pre-applied thermal interface material. The collector-emitter voltage (VCES) is 1200 V, with a continuous DC collector current (IC nom) of 300 A at TH = 30°C and a repetitive peak collector current (ICRM) of 600 A. The saturation voltage (VCEsat) ranges from 1.75 V to 2.10 V depending on junction temperature. Thermal resistance from junction to heatsink is 0.190 K/W for the IGBT and 0.296 K/W for the diode.
Feature Summary
- High power and thermal cycling capability
- Isolated copper base plate
- Pre-applied thermal interface material
Applications
- Motor drives
- Servo drives
Procurement Notes
Verify the exact ordering suffix against official Infineon documentation to ensure correct terminal technology and thermal interface specifications. Confirm that the component matches the required electrical ratings and mechanical dimensions for your specific inverter design before finalizing procurement.
Selection Notes
Select this module for applications requiring high robustness under thermal cycling conditions. Ensure the gate drive circuit supports the specified VGE range and internal gate resistor values. Verify that the system's stray inductance remains within limits to maintain safe operating area compliance during switching events.
Part Context
This component belongs to the MIPAQ base module family, designed for industrial power conversion. It utilizes Infineon's Trench/Fieldstop IGBT4 technology combined with an Emitter Controlled Diode to optimize switching losses and conduction characteristics for medium-power inverter applications.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided datasheet. Consult official Infineon resources or authorized distributors for cross-reference information regarding compatible modules with similar electrical and mechanical specifications.
FAQ
What is the maximum baseplate operation temperature?
The maximum baseplate operation temperature (TBPmax) is 125 °C.
Does the module include thermal interface material?
Yes, the module comes with pre-applied thermal interface material.
What is the isolation test voltage?
The isolation test voltage (VISOL) is 2.5 kV RMS at 50 Hz for 1 minute.
