IFN160BST3TR

Overview

The InterFET IFN160BST3TR is an N-Channel Junction Field Effect Transistor (JFET) housed in a surface-mount SOT-23 package. It utilizes InterFET's N107A geometry to achieve low gate leakage of 3.0 pA typical at 20V and low input capacitance (CISS) of 4 pF typical. The device features a gate-to-source breakdown voltage (BVGSS) of -75 V minimum, a cutoff voltage (VGS(OFF)) ranging from -0.25 V to -4.5 V, and a drain-to-source saturation current (IDSS) between 1 mA and 3 mA. Forward transconductance (GFS) is specified at 1500 µS, with continuous power dissipation rated at 350 mW.

Feature Summary

• Utilizes InterFET N107A geometry for optimized performance characteristics
• Provides high radiation tolerance suitable for demanding environments
• Features extremely low gate leakage current and minimal input capacitance
• Supports custom test and binning options for specific design requirements

Applications

• Audio tone control circuits and microphone impedance transformation
• Radar and communication systems in military and aerospace sectors
• Medical imaging systems and ultrasound equipment
• High impedance switches and signal mixers

Procurement Notes

Verify the specific suffix 'TR' indicates tape and reel packaging when sourcing this component. Confirm that the 'B' designation aligns with the required IDSS and VGS(OFF) binning specifications for your circuit design. Ensure compatibility with SOT-23 land patterns during PCB layout. Check for RoHS and REACH compliance documentation if required by your manufacturing standards. Validate supply chain authenticity through authorized distributors.

Selection Notes

Select the IFN160BST3TR when low noise and high input impedance are critical for audio or sensor interfaces. The 'B' variant offers specific IDSS and VGS(OFF) ranges distinct from the 'A' and 'C' variants. Consider the SOT-23 package constraints regarding thermal dissipation limits. Evaluate the -75V gate-source breakdown voltage against potential transient spikes in the application environment.

Part Context

This component belongs to the IFN160A-B-C family of N-Channel JFETs manufactured by InterFET. The family shares identical electrical characteristics and pinouts, differing primarily in production binning for saturation current and cutoff voltage parameters. The IFN160 series is designed as a cost-effective solution for low-noise applications, serving as a direct cross-reference for legacy parts like the 2SK160.

Replacement Considerations

Public datasheets list 2SK160, BF510, BF511, J305, and MMBFJ202 as industry standard crosses. Similar InterFET parts include 2N4339, 2N4340, SMP4339, and SMPBF510. Verify pinout compatibility and parameter tolerances before substituting. Note that source and drain pins are interchangeable on this device.