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Product Detailed Parameters
- Description：JFET N-Channel -40V Low Ciss
- Series：IFN201
- Mfr：InterFET
- Package：Strip
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：40 V
- Current - Drain (Idss) @ Vds (Vgs=0)：800 µA @ 20 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：800 mV @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds：4pF @ 20V
- Resistance - RDS(On)：1.2 kOhms
- Power - Max：350 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The IFN201AST3 is an N-channel JFET from InterFET, packaged in a surface-mount SOT-23-3 configuration. It utilizes the InterFET N106A geometry and features tightly screened gate-to-source cutoff voltage (VGS(OFF)) ranging from -0.5V to -1.0V. The device exhibits low gate leakage of 750fA typical at 20V and low input capacitance (CISS) of 3pF typical. Maximum ratings include a reverse gate-source voltage of -40V, continuous power dissipation of 350mW, and an operating junction temperature range of -55°C to 150°C. Electrical characteristics specify a forward transconductance (GFS) of 500µS typical at 20V drain-source voltage.
Feature Summary
- Tightly screened VGS(OFF) binning for precise biasing requirements
- Ultra-low gate leakage current suitable for high-impedance circuits
- High radiation tolerance for demanding environments
- InterFET N106A geometry optimized for low noise performance
Applications
- Audio preamplifiers and microphone impedance transformation
- Low leakage switches and signal mixers
- Medical imaging systems and ultrasound equipment
- Radar and communication systems in military/aerospace applications
Procurement Notes
Verify the specific suffix 'AST3' corresponds to the desired bulk or tape-and-reel packaging format before ordering. Confirm that the tightly screened VGS(OFF) parameters meet the design specifications. Ensure ESD handling protocols are followed during assembly due to the sensitivity of the JFET gate structure.
Selection Notes
Select the IFN201AST3 when low noise and minimal gate leakage are critical. Compare GFS and IDSS ranges against circuit requirements. Consider the IFN201A variant if tighter VGS(OFF) screening is needed. Evaluate thermal derating curves for high-temperature operation scenarios.
Part Context
The IFN201AST3 belongs to the IFN201 family, which includes variants like IFN201ST3 and IFN202ST3. These parts are designed as cost-sensitive, low-noise alternatives to industry standard JFETs. The family shares similar electrical characteristics but varies in screening levels and parameter tolerances.
Replacement Considerations
Official cross-reference data lists SST201, MMBFJ201, J201, and J202 as industry standard equivalents. Verify pinout compatibility and parameter margins before substitution. Consult InterFET documentation for detailed comparison of electrical limits.
FAQ
Are the source and drain pins interchangeable?
Yes, the datasheet notes that the Source/Drain (S/D) pins are interchangeable in the SOT-23 package.
What is the maximum reverse gate-source voltage?
The maximum reverse gate-source voltage (VRGS) is rated at -40V.
Is the IFN201AST3 RoHS compliant?
Yes, the component is RoHS, REACH, and CMR compliant according to the manufacturer's specifications.
