IFS100B12N3E4PB11BPSA1

Overview

The IFS100B12N3E4P_B11 is a MIPAQ base module featuring Trench/Fieldstop IGBT4 technology and an Emitter Controlled Diode. It utilizes PressFIT contact technology and includes pre-applied thermal interface material. The module provides a collector-emitter voltage of 1200 V, with a nominal continuous DC collector current of 100 A at 25°C and 150 A at 100°C. The repetitive peak collector current reaches 200 A. Key electrical parameters include a typical VCEsat of 1.75 V at 25°C and a forward voltage of 1.65 V for the diode at 25°C. Thermal resistance from junction to case is 0.29 K/W for the IGBT and 0.49 K/W for the diode.

Feature Summary

• Integrates Trench/Fieldstop IGBT4 technology with an Emitter Controlled Diode for optimized switching performance.
• Features PressFIT connection technology combined with pre-applied thermal interface material for simplified assembly.
• Includes an integrated NTC thermistor for reliable temperature monitoring within the power cycle.
• Provides high power and thermal cycling capability with an isolated copper base plate.

Applications

• Motor Drives
• Servo Drives

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact configuration details. Ensure that the component matches the required technical specifications for your application before procurement. Cross-reference the manufacturer part number with authorized distributors to guarantee authenticity and traceability. Confirm compliance with relevant environmental standards prior to integration into final products.

Selection Notes

Select this module for applications requiring robust industrial-grade power conversion with integrated thermal management. The PressFIT technology eliminates soldering requirements, reducing mechanical stress on the module. Consider the integrated NTC for precise thermal control in servo and motor drive systems. Evaluate the thermal resistance values to ensure adequate heatsinking for the intended operating conditions.

Part Context

This component belongs to the MIPAQ base module family from Infineon Technologies. It represents a standard housing design utilizing IGBT4 technology. The module integrates both the IGBT switch and the freewheeling diode in a single package. It is designed for medium-power industrial applications requiring high reliability and efficient thermal dissipation.

Replacement Considerations

Consult official Infineon replacement guides for compatible modules. Verify pinout compatibility and thermal characteristics when substituting similar components. Ensure that any alternative part meets or exceeds the original voltage and current ratings.

FAQ

What type of contact technology does the IFS100B12N3E4P_B11 use?

The module uses PressFIT contact technology for connecting to the PCB.

Is thermal interface material included with the module?

Yes, the module comes with pre-applied thermal interface material.

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCES) is rated at 1200 V.