SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IFS150B12N3E4PB11BPSA1 is a silicon-based IGBT module from Infineon Technologies, belonging to the Trenchstop IGBT4 - E4 series. It features a six-pack configuration with a maximum collector-emitter voltage (VCEO) of 1.2 kV and a continuous collector current of 150 A at 25°C. The module exhibits a collector-emitter saturation voltage of 1.75 V and a gate-emitter leakage current of 100 nA. Power dissipation is rated at 515 W, operating within a temperature range of -40°C to +150°C. It utilizes a tray package for mounting.
Verify the specific ordering suffix against official Infineon documentation to confirm exact electrical characteristics and packaging details. Confirm RoHS compliance status through the manufacturer's latest product qualification reports before integration into regulated equipment designs.
Select this component for applications requiring high current density in a compact six-pack topology. Ensure the cooling solution supports the specified 515 W power dissipation rating. Verify that the drive circuitry accommodates the 1.75 V saturation voltage and 150 A current requirements under expected load conditions.
This module is part of Infineon's Trenchstop IGBT4 family, designed for medium-power industrial applications. It shares the EconoDUAL form factor with other modules in the series, facilitating standardized mechanical integration. The E4 generation offers improved short-circuit ruggedness compared to previous iterations.
Direct replacements include IFS150B12N3E4PB50BPSA1 and IFS100B12N3E4P_B11. Verify pinout compatibility and thermal resistance parameters when substituting these variants to ensure system performance remains within specifications.