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Product Detailed Parameters
- Description：IGBT MOD 1700V 300A 20MW
- Series：MIPAQ™
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：Trench Field Stop
- Configuration：Full Bridge
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 150A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：300 A
- Power - Max：-
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：13.5 nF @ 25 V
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Overview
The IFS150B17N3E4P_B11 is a MIPAQ base module featuring Trench/Fieldstop IGBT4 technology and an Emitter Controlled Diode. It utilizes PressFIT termination with pre-applied thermal interface material. Key electrical parameters include a collector-emitter voltage (VCES) of 1700 V, a nominal continuous DC collector current (IC nom) of 150 A at TH = 80°C, and a repetitive peak collector current (ICRM) of 300 A. The typical collector-emitter saturation voltage (VCEsat) is 1.95 V at Tvj = 25°C. The integrated NTC thermistor has a rated resistance (R25) of 5.00 kΩ.
Feature Summary
- Integrated NTC temperature sensor for thermal monitoring
- PressFIT connection technology with pre-applied thermal interface material
- Isolated copper baseplate construction
Applications
- Motor drives
- UPS systems
Procurement Notes
Verify the specific ordering suffix B11 to confirm the inclusion of pre-applied thermal interface material and PressFIT termination style. Ensure compatibility with standard mounting hardware and verify that the application environment supports the specified operating junction temperature range of -40°C to 150°C.
Selection Notes
Select this component for applications requiring high voltage blocking capability and robust short-circuit withstand performance up to 700 A. Consider the positive temperature coefficient of VCEsat for stable parallel operation. Verify that the gate drive circuitry can accommodate the internal gate resistor and required switching energy levels under inductive load conditions.
Part Context
This module belongs to Infineon's MIPAQ series, designed for industrial power conversion. It combines IGBT4 chip technology with emitter-controlled diodes to optimize switching losses and reverse recovery characteristics within a compact, standardized housing suitable for press-fit assembly processes.
Replacement Considerations
Consult official replacement lists for direct equivalents. Verify pinout compatibility and thermal resistance values when considering alternative packages or technologies.
