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The IFS200B12N3E4_B37 is a MIPAQ™ base module integrating Trench/Fieldstop IGBT4 and Emitter Controlled HE diode technologies with an NTC thermistor and shunt. It features a collector-emitter voltage of 1200 V, a continuous DC collector current of 200 A at 90 °C case temperature, and a repetitive peak current of 400 A. The module utilizes a copper base plate for high thermal cycling capability and includes isolated terminals with a 2.5 kV isolation test voltage. Operating junction temperatures reach up to 150 °C under switching conditions.
Verify the specific ordering suffix against official Infineon documentation to ensure correct configuration. Confirm that the component meets industrial qualification standards per IEC 60747, 60749, and 60068 before integration into final designs.
Select this module for applications requiring high current density and integrated sensing capabilities. Ensure the cooling system maintains the case temperature within specified limits to support the 200 A continuous current rating and manage thermal resistance effectively.
This component belongs to the Infineon MIPAQ™ base module family, designed for industrial power electronics. It combines advanced IGBT4 chip technology with integrated passive components in a standard housing, targeting robust performance in motor control environments.
Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement matches the 1200 V rating, 200 A current capacity, and MIPAQ™ mechanical footprint while maintaining compatible integrated sensor specifications.
The maximum operating junction temperature under switching conditions is 150 °C.
Yes, the module integrates an NTC thermistor for temperature monitoring and a shunt resistor for current sensing.
The isolation test voltage is 2.5 kV RMS at 50 Hz for 1 minute.