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The IFS75B12N3E4_B31 is a MIPAQ base module featuring Trench/Fieldstop IGBT4 technology with emitter-controlled diodes and integrated current sense shunts. It provides a collector-emitter voltage of 1200 V and a nominal continuous collector current of 75 A, with a repetitive peak current rating of 150 A. The module incorporates a copper base plate for high thermal cycling capability and utilizes solder contact technology. Electrical characteristics include a typical saturation voltage of 1.85 V at 25°C and an operating junction temperature range up to 150°C.
Verify the specific ordering suffix against official documentation to confirm mechanical and electrical configurations. Ensure compliance with industrial qualification standards such as IEC 60747 and IEC 60068 before integration. Confirm mounting torque specifications and application notes for proper installation.
Select this module for applications requiring 1200 V blocking capability and 75 A continuous current handling. Consider the integrated shunt functionality if current sensing is required without external components. Evaluate thermal resistance values against the system's heatsink design to ensure adequate heat dissipation within the specified operating temperature limits.
This component belongs to Infineon's MIPAQ base module series, utilizing Trench/Fieldstop IGBT4 technology. It is designed for industrial power electronics applications where reliability and thermal stability are critical. The module integrates both switching devices and passive sensing elements into a single package.
Consult official replacement guides for compatible modules within the same voltage and current ratings. Verify pin compatibility and thermal interface requirements when substituting similar IGBT modules in existing designs.
The maximum repetitive peak collector current (ICRM) is 150 A.
Yes, the module includes integrated current sense shunts.
The isolation test voltage (VISOL) is 2.5 kV RMS at 50 Hz for 1 minute.