SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IFS75S12N3T4_B11 is a six-pack IGBT module manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 75 A at 25°C. The typical collector-emitter saturation voltage is 1.85 V, while the anti-parallel diode forward voltage is 1.7 V. The module supports a power dissipation of 385 W and operates within a temperature range of -40°C to +150°C. It utilizes Trenchstop IGBT4-E4 technology and is housed in an EconoPACK™ 3 package.
Verify the specific suffix (B11) against official Infineon documentation to confirm exact ordering specifications. Ensure compatibility with existing thermal management solutions and gate driver requirements before procurement. Cross-reference datasheet revisions to confirm parameter consistency.
Select this module for applications requiring 1200 V blocking capability and 75 A current handling. Consider the 1.85 V saturation voltage for conduction loss calculations. Verify that the system layout accommodates the physical dimensions of the EconoPACK™ 3 form factor.
This component belongs to Infineon's IFS series of six-pack IGBT modules. It is part of the broader EconoPACK™ family, designed for high reliability and power density. The module leverages advanced silicon technology to balance efficiency and robustness in industrial power electronics.
Public confirmed substitute part numbers are not available in the provided source material.