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The IFT150B12N3E4BOSA1 is a silicon-based IGBT module from Infineon Technologies, belonging to the Trenchstop IGBT4 - E4 series. It utilizes the Low Power Econo package and features a 6-pack configuration. The device supports a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 150 A at 25°C. It incorporates an integrated NTC thermistor for thermal monitoring and operates within a junction temperature range of -40°C to +150°C.
Verify the specific ordering suffix against official Infineon documentation to ensure correct packaging and variant specifications. Confirm that the requested component matches the exact part number including all alphanumeric designators to avoid receiving incorrect package types or electrical variants.
Select this module for applications requiring high current density in a low-power form factor. Ensure the cooling solution accommodates the thermal resistance characteristics of the Econo package. Verify gate drive requirements align with the Trenchstop IGBT4 switching parameters for optimal efficiency.
This component is part of Infineon's Trenchstop IGBT4 family, designed for medium-power applications. It represents an evolution in silicon technology aimed at reducing switching losses while maintaining robustness. The Low Power Econo package allows for efficient mounting in space-constrained industrial environments.
Consult official Infineon cross-reference lists for direct substitutes. Consider modules with identical voltage ratings and comparable current capabilities if exact replacements are unavailable.