IGA03N120H2XKSA1

Description：IGBT 1200V 3A TO220-3-31
Series：-

SKU:bcac11f5a61a Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 1200V 3A TO220-3-31
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：3:00 AM
Current - Collector Pulsed (Icm)：9:00 AM
Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 3A
Power - Max：29 W
Switching Energy：290µJ
Input Type：Standard
Gate Charge：8.6 nC
Td (on/off) @ 25°C：9.2ns/281ns
Test Condition：800V, 3A, 82Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Supplier Device Package：PG-TO220-3-31
Grade：-
Qualification：-

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IGA03N120H2XKSA1

Overview

The IGA03N120H2 is a single N-channel IGBT from Infineon Technologies, utilizing HighSpeed 2 technology for 1200V applications. It features a collector-emitter voltage of 1200V and a continuous collector current of 3A at 25°C. The device operates with a maximum junction temperature of 150°C and includes an internal emitter inductance of 7nH. Packaged in PG-TO220-3 variants (FullPAK), it offers optimized turn-off energy of 0.15mJ at IC=3A.

Feature Summary

Second-generation HighSpeed Technology designed to reduce losses in resonant circuits
Temperature stable behavior with tight parameter distribution
Optimized Eoff specifically for low current operation at IC = 3A
Qualified according to JEDEC standards for target applications

Applications

TV horizontal line deflection circuits
Resonant power conversion topologies
High-speed switching applications requiring low turn-off energy

Procurement Notes

Verify the specific package suffix against the datasheet table: 'IGA03N120H2' corresponds to both PG-TO-220-3-31 and PG-TO-220-3-34 (FullPAK). Confirm RoHS compliance and Pb-free lead plating status. Ensure the ordering code matches the exact marking 'G03H1202'. Check for availability of PSpice models if simulation is required.

Selection Notes

Select this component for designs prioritizing low turn-off energy at low currents (3A) rather than high current capacity. The 150°C max junction temperature limits thermal headroom compared to 175°C devices. Verify gate resistor requirements to manage switching times, as Eoff is sensitive to RG values. Consider the 29W power dissipation limit at 25°C case temperature for heat sink sizing.

Part Context

This part belongs to Infineon's HighSpeed 2 IGBT family, distinct from standard or TRENCHSTOP series. It is engineered for fast switching and resonant applications where minimizing turn-off loss is critical. The device is functionally similar to IKY/IKW series but optimized for lower current levels and specific soft-switching characteristics.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires matching VCE(sat), Eoff, and package dimensions manually.

FAQ

What is the typical turn-off energy (Eoff) at IC = 3A?

The typical turn-off energy is 0.15 mJ at TJ = 25°C and 0.26 mJ at TJ = 150°C, measured under inductive load conditions with VCC = 800V and RG = 82 Ω.

Does the IGA03N120H2 include an integrated anti-parallel diode?

No, the datasheet describes it as a single IGBT. The commutation diode mentioned in test conditions refers to an external device (e.g., IKP03N120H2) used during characterization.