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Product Detailed Parameters
- Description：IGBT 1200V 9.6A TO263-3-2
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：9.6 A
- Current - Collector Pulsed (Icm)：9.9 A
- Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 3A
- Power - Max：62.5 W
- Switching Energy：290µJ
- Input Type：Standard
- Gate Charge：22 nC
- Td (on/off) @ 25°C：9.2ns/281ns
- Test Condition：800V, 3A, 82Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：PG-TO263-3-2
- Grade：-
- Qualification：-
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Overview
The IGB03N120H2ATMA1 is a HighSpeed 2-Technology IGBT rated at 1200V collector-emitter voltage and 3A continuous collector current. It features optimized turn-off energy (Eoff) of 0.15mJ at 3A, with a maximum power dissipation of 62.5W. The device operates within a junction temperature range of -40°C to +150°C and utilizes the PG-TO263-3-2 surface-mount package.
Feature Summary
- Second-generation HighSpeed Technology designed for resonant circuit applications
- Optimized Eoff specifically tuned for low current operation at 3A
- Temperature stable behavior ensuring consistent performance across operating ranges
- Qualified according to JEDEC standards for target appliance applications
Applications
- Frequency inverters for washing machines
- Fan speed control systems
- Pump drive circuits
- Vacuum cleaner motor controls
Procurement Notes
Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure the component meets RoHS compliance requirements and Pb-free lead plating standards as defined in the datasheet revision history before finalizing procurement orders.
Selection Notes
Select this component for high-frequency inverter designs requiring tight parameter distribution and parallel switching capability. Evaluate thermal resistance characteristics relative to the PCB copper area constraints. Confirm that the gate charge and internal emitter inductance values align with the driver circuit design requirements for optimal switching performance.
Part Context
This part belongs to the IGB03N120H2 product family utilizing Infineon's second-generation HighSpeed technology. It is engineered for 1200V silicon applications where loss reduction and temperature stability are critical. The device complements other components in the spectrum offering PSpice models for simulation purposes.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing designs by comparing electrical parameters such as VCE(sat), switching energies, and thermal resistance against alternative devices from the manufacturer.
FAQ
What is the typical turn-off energy (Eoff) at 3A?
The typical turn-off energy is 0.15mJ under standard test conditions of VCC=800V, IC=3A, and Tj=25°C.
Is the device suitable for parallel switching?
Yes, the HighSpeed 2-Technology provides tight parameter distribution and parallel switching capability.
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (VCE) is rated at 1200V.
