IGB10N60TATMA1

Overview

The IGB10N60TATMA1 is a single N-channel Insulated Gate Bipolar Transistor from Infineon's TRENCHSTOP™ Series, utilizing Fieldstop technology. It features a collector-emitter voltage of 600 V and a continuous collector current of 24 A at 25°C case temperature. The device operates with a maximum junction temperature of 175°C and offers a typical saturation voltage of 1.5 V. Packaged in PG-TO263-3 (D2PAK-3), it supports surface mount installation.

Feature Summary

• Utilizes TRENCHSTOP™ and Fieldstop technology for low conduction losses and tight parameter distribution.
• Features positive temperature coefficient in VCE(sat) to facilitate easy parallel switching.
• Provides high ruggedness and temperature-stable behavior suitable for demanding environments.
• Includes short circuit withstand capability of 5 µs under specified conditions.

Applications

• Frequency inverters for washing machines
• Fan motor drives
• Pump control systems
• Vacuum cleaner motors

Procurement Notes

Verify the component authenticity by checking the marking code G10T60 on the package against official Infineon documentation. Confirm that the ordering suffix ATMA1 corresponds to the specific reel or cut tape packaging requirements for your assembly line. Ensure compliance with RoHS standards and Pb-free lead plating specifications as defined in the datasheet.

Selection Notes

Select this component when designing circuits requiring 600V blocking capability with moderate current handling up to 24A. Consider its thermal resistance characteristics and power dissipation limits relative to your heatsinking strategy. Evaluate the switching energy losses and gate charge parameters to ensure compatibility with your driver circuitry and desired switching frequency range.

Part Context

This part belongs to the TRENCHSTOP™ IGBT3 series, designed specifically for low-loss applications in consumer appliances. It represents an evolution in silicon technology aimed at improving efficiency in household motor drives. The PG-TO263-3 package provides a balance between thermal performance and PCB space constraints for surface-mount designs.

Replacement Considerations

Consult Infineon technical support for qualified substitutes. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions while verifying electrical parameter compatibility.

FAQ

What is the maximum short circuit withstand time for the IGB10N60TATMA1?

The device has a short circuit withstand time of 5 µs when VGE = 15V, VCC ≤ 400V, and Tj ≤ 150°C.

Does the IGB10N60TATMA1 have an integrated gate resistor?

No, the datasheet specifies that the internal emitter resistor R_Gint is none (not integrated).

What is the typical gate charge value for this IGBT?

The typical gate charge (Q_Gate) is 62 nC under conditions of V_CC = 480V, I_C = 10A, and V_GE = 15V.