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The IGB30N60H3ATMA1 is a high-speed Insulated Gate Bipolar Transistor utilizing Trench and Fieldstop technology. It features a collector-emitter voltage of 600V and a DC collector current rating of 30A at 25°C case temperature, rising to 60A under specific conditions. The device supports a maximum junction temperature of 175°C and operates with a saturation voltage of 1.95V at 25°C. Packaged in PG-TO263-3, it offers low turn-off energy and EMI characteristics suitable for industrial power control applications.
Verify the component authenticity by checking the marking code G30H603 on the package surface against the datasheet specifications. Ensure the ordering suffix ATMA1 corresponds to the required tape-and-reel packaging format if applicable, as this affects handling procedures. Confirm that the device meets RoHS compliance requirements for your specific manufacturing process.
Select this component for designs requiring high switching speeds and low electromagnetic interference. The 600V rating suits medium-voltage industrial applications. Consider the thermal resistance values when designing heat sinks, noting the significant difference between junction-case and junction-ambient resistance depending on PCB copper footprint area.
This part belongs to Infineon's third-generation high-speed switching series. It complements other devices in the IGB30N60H3 family, offering variations in packaging or packaging quantities while maintaining identical electrical performance characteristics defined by the TrenchStop technology platform.
Direct substitutes within the same family include variants sharing the IGB30N60H3 core specification but differing in ordering suffixes for packaging. Verify pinout compatibility and thermal parameters before substitution.
The device can withstand a short circuit for up to 5 microseconds at a gate-emitter voltage of 15.0V and collector voltage up to 400V.
Yes, the component is rated for reflow soldering at 260°C, compliant with MSL1 according to JEDEC J-STA-020.
The typical gate charge (QG) is 165 nC, measured at VCC=480V, IC=30.0A, and VGE=15V.