IGB50N65S5ATMA1

$3.66

Description：IGBT TRENCH FS 650V 80A TO263-3
Series：TrenchStop™ 5

SKU:ed9ec2c703e5 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 80A TO263-3
Series：TrenchStop™ 5
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：200 A
Vce(on) (Max) @ Vge, Ic：1.7V @ 15V, 50A
Power - Max：270 W
Switching Energy：1.23mJ (on), 740µJ (off)
Input Type：Standard
Gate Charge：120 nC
Td (on/off) @ 25°C：20ns/139ns
Test Condition：400V, 50A, 8.2Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：PG-TO263-3
Grade：-
Qualification：-

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IGB50N65S5ATMA1

Overview

The IGB50N65S5ATMA1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon's TRENCHSTOP™ 5 high-speed series. It features a PG-TO263-3 surface-mount package and supports a maximum collector-emitter voltage of 650 V with a continuous collector current of 80 A at 25°C case temperature. The device exhibits a low saturation voltage of 1.35 V at nominal current and operates up to a maximum junction temperature of 175°C.

Feature Summary

High-speed S5 technology designed for smooth switching in both hard and soft switching applications
Low gate charge (QG) combined with very low collector-emitter saturation voltage
Qualified for industrial applications according to JEDEC standards

Applications

Solar String Inverter
Industrial SMPS
Welding Equipment
Energy Storage Systems
EV Chargers

Procurement Notes

Verify the component against official datasheet specifications, specifically checking the collector-emitter breakdown voltage and saturation voltage ratings. Confirm that the PG-TO263-3 package matches the design footprint requirements. Ensure compliance with RoHS directives and lead-free plating standards before integration into production assemblies.

Selection Notes

Select this component for designs requiring high-speed switching capabilities within a 650 V system. The low saturation voltage aids in reducing conduction losses, while the robust thermal characteristics support operation at elevated temperatures. Consider the gate charge requirements when designing the driver circuitry to optimize switching performance.

Part Context

This discrete IGBT belongs to the fifth-generation TRENCHSTOP™ family, engineered to replace previous generations of power transistors. It utilizes silicon technology optimized for high efficiency and reliability in demanding industrial and renewable energy environments.