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Product Detailed Parameters
- Description：IGBT TRENCH FIELD STOP 1200V DIE
- Series：TrenchStop™
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：30 A
- Vce(on) (Max) @ Vge, Ic：2.07V @ 15V, 8A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
Download product information
Overview
The IGC13T120T8L is a bare die TRENCHSTOPTM IGBT4 Low Power Chip utilizing trench and field stop technology. It features a collector-emitter voltage of 1200 V, a DC collector current of 10 A, and a pulsed collector current of 30 A. The device operates within a junction temperature range of -40 °C to +175 °C. Key electrical characteristics include a typical collector-emitter saturation voltage of 1.85 V at 10 A and 15 V gate drive. Input capacitance is typically 625 pF. The chip dimensions are 3.54 mm by 3.81 mm with a silicon thickness of 115 µm.
Feature Summary
- Utilizes TRENCHSTOPTM IGBT4 low power chip technology for optimized performance.
- Features positive temperature coefficient for easy paralleling in module designs.
- Designed for low switching losses to enhance efficiency in power applications.
Applications
- Low / medium power drives
- Low / medium power modules
Procurement Notes
Verify the specific ordering suffix (e.g., L7623P or L7623V) against the required mechanical parameters and packaging specifications. Confirm that the application environment complies with industrial standards, as this component lacks automotive qualification. Ensure proper handling procedures for electrostatic sensitive devices are followed during storage and assembly.
Selection Notes
Select this bare die for custom module integration where specific thermal and electrical constraints require precise control over chip mounting. Evaluate the need for short-circuit withstand capability based on the assembly's thermal properties. Consider the compatibility of wire bonding materials and soldering processes with the specified pad metals and passivation layers.
Part Context
This component belongs to Infineon's TRENCHSTOPTM IGBT4 family, designed for industrial power control applications. It represents a low-power chip variant intended for integration into larger power modules rather than standalone discrete use. The technology focuses on balancing switching losses and conduction characteristics for efficient power conversion.
Replacement Considerations
Direct replacement requires matching the die size (3.54 x 3.81 mm), voltage rating (1200 V), and current capabilities. Verify compatibility with existing module assembly processes, including die attach and wire bonding specifications. Consult official documentation for any updated generations within the IGBT4 family.
