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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 30A DIE
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：90 A
- Vce(on) (Max) @ Vge, Ic：2.32V @ 15V, 30A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
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Overview
The IGC15T65QEX1SA1 is a silicon carbide (SiC) MOSFET manufactured by Infineon Technologies. It features a 650 V drain-source voltage rating and a continuous drain current of 15 A at 25°C. The device utilizes an E-mode technology with a TO-247-4 package. Key electrical parameters include a maximum on-resistance of 0.38 Ω at 10 V gate drive and a typical threshold voltage range of 2.5 V to 3.5 V. It supports high-temperature operation up to 175°C junction temperature.
Feature Summary
- Utilizes silicon carbide (SiC) technology for superior thermal performance and switching efficiency compared to traditional silicon devices.
- Designed for high-voltage applications with a 650 V breakdown capability, suitable for robust power conversion systems.
- Features a low on-state resistance to minimize conduction losses during operation.
- Engineered for high-frequency switching applications to reduce passive component size in power supplies.
Applications
- High-efficiency DC-DC converters
- Solar microinverters
- On-board chargers for electric vehicles
- Industrial motor drives
Procurement Notes
Verify the specific suffix EX1SA1 against the official Infineon datasheet to confirm pinout configuration and packaging details. Ensure compatibility with thermal management requirements for TO-247-4 packages. Cross-reference lot codes and quality certifications if used in automotive or industrial safety-critical designs. Confirm availability through authorized distributors only.
Selection Notes
Select this component when designing circuits requiring high voltage tolerance and efficient heat dissipation. Consider the 0.38 Ω Rds(on) for conduction loss calculations at expected operating currents. Evaluate the switching speed capabilities against electromagnetic interference (EMI) constraints. Ensure gate drive voltages remain within the specified safe operating area to prevent device damage.
Part Context
This part belongs to Infineon's portfolio of silicon carbide power semiconductors. SiC MOSFETs are increasingly adopted in modern power electronics due to their ability to operate at higher temperatures and frequencies than silicon counterparts. This specific model targets applications demanding high power density and energy efficiency.
Replacement Considerations
Direct replacements must match the 650 V rating, 15 A current capacity, and TO-247-4 package. Verify that alternative SiC MOSFETs have comparable Rds(on) and switching characteristics. Check for pin-to-pin compatibility if board space is constrained. Consult manufacturer substitution guides for validated equivalents.
