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Product Detailed Parameters
- Description：IGBT TRENCH FIELD STOP 1200V DIE
- Series：TrenchStop™
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：75 A
- Vce(on) (Max) @ Vge, Ic：2.07V @ 15V, 25A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
Download product information
Overview
The IGC27T120T8LX1SA2 is a bare die Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, utilizing HighSpeed 3 technology. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current rating of 25 A. The device exhibits a maximum saturation voltage of 2.42 V at specified conditions and a gate charge of 85 nC. Reverse recovery time is rated at 105 ns. The component operates within a temperature range of -40 °C to 175 °C.
Feature Summary
- HighSpeed 3 IGBT technology for optimized switching performance
- Field stop design to reduce tail current
- Optimized for medium-frequency operation in 1200 V systems
Applications
- Medium-frequency power conversion systems
- Industrial motor drives
- Inverter applications requiring high voltage isolation
Procurement Notes
Verify the exact part number suffix against official Infineon documentation to ensure correct configuration. Confirm that the procurement source provides genuine Infineon Technologies components with traceable manufacturing data. Check for specific handling requirements associated with bare die semiconductor devices during storage and assembly.
Selection Notes
Select this component for designs requiring 1200 V blocking capability and 25 A current handling in bare die form factors. Consider the 2.42 V saturation voltage and 105 ns reverse recovery time for thermal and efficiency calculations. Ensure the application supports the -40 °C to 175 °C operating temperature range and utilizes appropriate mounting techniques for bare die integration.
Part Context
This IGBT belongs to Infineon's HighSpeed 3 family, designed for efficient power switching. As a bare die component, it lacks an external package, requiring direct attachment to substrates or heat sinks. It serves as a fundamental building block for custom power modules where space constraints and thermal management are critical design parameters.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing module designs when considering alternatives.
