IGC39T65QEX1SA1

Description：IGBT TRENCH FS 650V 75A DIE
Series：-

SKU:0f90dd305568 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 75A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：75 A
Current - Collector Pulsed (Icm)：225 A
Vce(on) (Max) @ Vge, Ic：2.22V @ 15V, 75A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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IGC39T65QEX1SA1

Overview

The IGC39T65QEX1SA1 is a single Insulated Gate Bipolar Transistor (IGBT) die manufactured by Infineon Technologies. It utilizes Trench Field Stop technology with a 650V voltage rating and supports a continuous collector current of 75A. The component features low saturation voltage (VCE(sat)) and low turn-off losses, contributing to high energy efficiency. Mechanical specifications include a die size of 6.59 mm x 5.91 mm and a total area of 38.95 mm². It is designed for power electronic applications requiring high-speed switching and low electromagnetic interference.

Feature Summary

Utilizes third-generation Trench & Field Stop technology for high-speed switching performance
Features low saturation voltage and low turn-off losses for enhanced energy efficiency
Designed to minimize electromagnetic interference in power electronic circuits

Applications

High-voltage power electronic systems
Industrial motor drives
Power conversion units

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to ensure correct technical configuration. Confirm that the device is supplied as a bare die rather than a packaged module. Check RoHS compliance status and mechanical dimensions against project requirements before procurement.

Selection Notes

Select this component for applications requiring a 650V rated IGBT die with high current handling capabilities. Consider the mechanical footprint and thermal management requirements associated with bare die mounting. Ensure gate drive circuitry supports the fast switching characteristics inherent to Trench Field Stop technology.

Part Context

This component belongs to Infineon's IGBT discrete series, which combines advanced semiconductor technology with reliability for superior energy efficiency. The IGC39T65QE series represents high-performance solutions designed for diverse industrial and commercial power applications.