IGC50T120T8RQX1SA1

Description：IGBT TRENCH FIELD STOP 1200V DIE
Series：-

SKU:fee0b6cc685a Category: Single IGBTs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FIELD STOP 1200V DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：150 A
Vce(on) (Max) @ Vge, Ic：2.42V @ 15V, 50A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

Download product information

IGC50T120T8RQX1SA1

Overview

The IGC50T120T8RQX1SA1 is a trench field-stop Insulated Gate Bipolar Transistor (IGBT) die manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 1200V and a continuous collector current rating of 50A at 25°C. The device exhibits a typical saturation voltage of 2.42V when driven at 15V with a collector current of 15A. Designed for high-temperature operation, it supports junction temperatures ranging from -40°C to 175°C. This component belongs to the HighSpeed 3 family, which optimizes the balance between switching and conduction losses for frequencies between 25kHz and 70kHz.

Feature Summary

High-speed switching performance characterized by MOSFET-like turn-off behavior to minimize switching losses.
Robust thermal capability supporting junction temperatures up to 175°C for demanding environments.
Optimized trade-off between conduction and switching losses suitable for mid-frequency applications.

Applications

Motor control systems
Switching mode power supplies
Industrial inverters

Procurement Notes

Verify the specific suffix 'QX1SA1' against official Infineon documentation to confirm exact mass production status and RoHS compliance details. Ensure the procurement channel provides valid traceability for automotive-grade components. Confirm that the die form factor matches the intended module assembly requirements before finalizing orders.

Selection Notes

Select this component for designs requiring a 1200V rated IGBT die with high current handling capabilities. The HighSpeed 3 technology is appropriate for applications operating within the 25kHz to 70kHz frequency range where low turn-off losses are critical. Consider the 175°C junction temperature limit when designing thermal management solutions for compact power electronics.

Part Context

This part is an individual semiconductor die rather than a pre-packaged module. It is designed to be integrated into larger power modules or custom assemblies. As part of the HighSpeed 3 family, it utilizes trench field-stop technology to achieve superior efficiency compared to standard planar IGBTs in similar voltage classes.

Replacement Considerations

Direct replacements must match the 1200V rating, 50A current capacity, and die configuration. Verify pinout compatibility if integrating into existing module footprints. Consult Infineon's official substitution guides for equivalent HighSpeed 3 family dies with adjusted current ratings if system requirements differ.