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Product Detailed Parameters
- Description：IGBT TRENCH FIELD STOP 1200V DIE
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：225 A
- Vce(on) (Max) @ Vge, Ic：2.07V @ 15V, 75A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
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Overview
The IGC70T120T8RL is a bare die Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a Field Stop Trench technology design optimized for high-efficiency power switching applications. The component is rated for a maximum collector-emitter voltage of 1200V and supports a continuous collector current of 75A. As a discrete semiconductor die, it requires integration into custom packaging or module assemblies rather than functioning as a standalone packaged device.
Feature Summary
- Utilizes Field Stop Trench technology for improved switching performance and reduced conduction losses
- Designed as a bare die configuration for flexible integration into custom power modules
- Optimized for high-voltage industrial and automotive power electronics applications
Applications
- Industrial motor drives and inverters
- Automotive traction inverter systems
- High-power DC-AC conversion modules
- Custom power semiconductor packaging solutions
Procurement Notes
Verify the specific datasheet version and FIT report availability directly from Infineon official channels before procurement. Confirm that the bare die format aligns with your assembly capabilities, as this component lacks standard packaging. Ensure compliance with RoHS3 standards and validate thermal management requirements for the specific substrate material used in your final module design.
Selection Notes
Select this component when designing custom power modules requiring high voltage blocking capability and efficient switching characteristics. Consider the thermal resistance and mechanical mounting constraints associated with bare die attachment. Evaluate the need for external gate drive circuitry compatible with the trench IGBT input capacitance and switching speed specifications provided in the technical documentation.
Part Context
This part belongs to Infineon's discrete IGBT product line, specifically utilizing their proprietary Field Stop Trench architecture. It represents a fundamental building block for advanced power electronics, allowing manufacturers to tailor package designs for specific thermal and electrical performance targets in demanding environments.
Replacement Considerations
No direct public substitute part numbers are confirmed in the available documentation. Due to the specialized bare die nature and specific trench technology, alternative components must be evaluated based on matching voltage ratings, current capacity, and thermal characteristics through rigorous engineering validation.
