IGC70T120T8RQX1SA1

Description：IGBT TRENCH FS 1200V 75A DIE
Series：TrenchStop™

SKU:6f56e6aab242 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 1200V 75A DIE
Series：TrenchStop™
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：75 A
Current - Collector Pulsed (Icm)：225 A
Vce(on) (Max) @ Vge, Ic：2.42V @ 15V, 75A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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IGC70T120T8RQX1SA1

Overview

The IGC70T120T8RQ is a bare die TRENCHSTOP™ IGBT4 High Speed Chip rated for 1200 V collector-emitter voltage and 75 A nominal DC collector current. It utilizes trench and field stop technology to achieve low switching losses and features a positive temperature coefficient for easy paralleling. The chip measures 9.12 mm by 7.71 mm with a thickness of 115 µm, packaged on sawn foil. It supports a virtual junction operating temperature range from -40 °C to +175 °C and withstands short-circuit conditions for up to 10 µs.

Feature Summary

Utilizes TRENCHSTOP™ IGBT4 high-speed trench and field stop technology
Features a positive temperature coefficient enabling easy paralleling
Designed for low switching losses in industrial applications

Applications

High frequency drives
Uninterruptible power supplies (UPS)
Welding equipment
Solar inverters

Procurement Notes

Verify the specific ordering suffix against Infineon documentation to confirm exact specifications. Confirm that the component is supplied as a bare die on sawn foil rather than a pre-packaged module. Ensure compatibility with intended assembly processes, including die bonding and wire bonding requirements, before procurement.

Selection Notes

Select this component for designs requiring high-speed switching capabilities within the TRENCHSTOP™ IGBT4 family. Consider its suitability for integration into low or medium power modules where thermal management and electrical isolation are managed at the system level. Evaluate the 115 µm thickness and pad dimensions against available substrate options.

Part Context

This part belongs to the TRENCHSTOP™ IGBT4 series, specifically designed as a high-speed chip for industrial power control. It serves as a building block for discrete semiconductor devices and power modules, offering a balance of performance and ruggedness for demanding power electronics environments.

Replacement Considerations

Consult official Infineon cross-reference lists for verified substitutes. Ensure any replacement maintains identical voltage ratings, current handling capabilities, and physical dimensions to fit existing module footprints without redesign.