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The IGD15N65T6ARMA1 is a TRENCHSTOP™ IGBT6 discrete power transistor manufactured by Infineon Technologies. It utilizes trench and field-stop technology for 650V applications, offering a maximum collector-emitter voltage of 650V and a DC collector current of 30A at 25°C case temperature. The device features a typical saturation voltage of 1.5V and supports a maximum junction temperature of 175°C. Packaged in PG-TO252-3 (DPAK), it provides short-circuit withstand capability of 3µs and low gate charge characteristics suitable for efficient switching operations.
Verify the specific ordering suffix ARMA1 to confirm tape-and-reel packaging configuration, as standard variants may differ. Ensure the component matches the PG-TO252-3 footprint requirements for your PCB layout. Confirm that the application does not require automotive qualification, as this part is qualified for industrial use only according to JEDEC standards.
Select this component for industrial drive applications requiring high reliability and moderate switching frequencies. The 650V rating suits general-purpose inverters and motor control circuits. Consider the 175°C maximum junction temperature for high-temperature environments. Evaluate thermal resistance values against your heatsinking strategy to maintain safe operating areas during continuous operation.
This device belongs to the TRENCHSTOP™ IGBT6 family, designed for 650V industrial applications. It represents an advancement in trench and field-stop technology, offering improved controllability and reduced losses compared to previous generations. The product spectrum includes various packages and ratings tailored for diverse industrial needs.
Check datasheet compatibility for direct pin-to-pin replacements within the same voltage and current class. Verify switching energy losses and thermal characteristics match your design constraints before substituting.
No, the product is not qualified according to AEC-Q100 or AEC-Q101 documents. It is qualified for industrial applications according to relevant JEDEC tests.
The device has a short-circuit withstand time of 3µs when VGE is 15.0V and VCC is less than or equal to 360V.
Yes, the Trench and field-stop technology provides a low VCEsat with a positive temperature coefficient, ensuring stable parallel operation and thermal behavior.