IGP01N120H2XKSA1

Overview

The IGP01N120H2XKSA1 is a single silicon Insulated Gate Bipolar Transistor (IGBT) from Infineon's TRENCHSTOP H2 series. It utilizes High-Speed 2 technology for optimized switching performance. The component features a TO-220-3 through-hole package configuration. Key electrical parameters include a collector-emitter breakdown voltage of 1200 V and a continuous collector current of 6 A at 25°C. The device supports a maximum power dissipation of 88 W and operates within a temperature range of -40°C to +175°C.

Feature Summary

• High-speed switching characteristics enabled by TRENCHSTOP H2 technology
• Robust thermal management capabilities suitable for high-power applications
• Through-hole mounting design for secure mechanical integration

Applications

• Induction heating systems
• Switched-mode power supplies
• Motor drive inverters

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status directly with the manufacturer or authorized distributors, as regulatory requirements may vary by region and production batch. Ensure that the procurement channel provides valid traceability documents consistent with automotive or industrial quality standards if required for the end application.

Selection Notes

Select this component when a 1200 V blocking capability and moderate current handling are required in a standard through-hole package. The H2 technology offers a balance between low conduction losses and fast switching speeds. Consider the thermal resistance of the TO-220-3 package and the need for adequate heatsinking to maintain junction temperatures within the specified 175°C limit during continuous operation.

Part Context

This part belongs to Infineon's TRENCHSTOP family, which integrates trench gate technology with field-stop structures. The H2 variant specifically targets applications requiring faster switching transitions compared to standard hard-switching IGBTs. It is designed for use in medium-power electronic converters where efficiency and reliability are critical operational factors.

Replacement Considerations

Direct substitutes include other Infineon IGBTs with similar 1200V ratings and TO-220 packages, such as the IGP01N120H3 series. Cross-brand replacements require careful evaluation of pin compatibility, thermal characteristics, and switching speed parameters to ensure circuit functionality remains unchanged.