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The IGP03N120H2XKSA1 is a single NPT IGBT from Infineon Technologies utilizing HighSpeed 2-Technology. It features a collector-emitter voltage of 1200 V and a continuous collector current of 9.6 A at 25°C. The device operates with a maximum power dissipation of 62.5 W and an operating junction temperature range of -40°C to +150°C. Packaged in PG-TO-220-3-1, it exhibits a typical turn-off energy of 0.15 mJ at 25°C and 800 V.
Verify the specific suffix XKSA1 against official documentation to confirm package type and compliance status. Confirm JEDEC qualification requirements for target applications. Ensure thermal management aligns with the specified junction-to-case resistance values provided in the datasheet.
Select this component for high-frequency resonant circuits requiring low turn-off energy. Evaluate thermal constraints based on the 62.5 W power dissipation limit. Consider the PG-TO-220-3-1 package dimensions for PCB layout compatibility. Verify gate drive requirements match the specified threshold and saturation voltages.
This part belongs to the IGx03N120H2 family, which includes the IGW03N120H2 variant. Both utilize HighSpeed 2-Technology designed for 1200V applications. The primary distinction lies in the physical packaging, with the IGP variant using PG-TO-220-3-1 compared to the TO-247-3 package of the IGW series.
STGWA40H120DF2 is listed as a similar replacement option.