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The IGP06N60T is a single N-channel Insulated Gate Bipolar Transistor from Infineon's TRENCHSTOP series, utilizing Fieldstop technology. It features a collector-emitter voltage of 600V and a continuous collector current of 12A at 25°C (6A at 100°C). The device has a maximum junction temperature of 175°C and a typical saturation voltage of 1.5V. It supports a short-circuit withstand time of 5µs and operates within a temperature range of -40°C to +175°C.
Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Confirm RoHS compliance and Pb-free lead plating requirements. Ensure the component meets JEDEC qualification standards for the intended target application environment before finalizing procurement specifications.
Select this component for applications requiring robust performance in variable speed drive systems or buck converters. Consider the thermal resistance characteristics and power dissipation limits relative to the operating case temperature. Evaluate the switching energy losses and gate charge parameters against the required switching frequency and driver capabilities.
This part belongs to the Infineon TRENCHSTOP™ Series, which integrates IGBT and Fieldstop technologies designed for 600V applications. The series emphasizes high ruggedness, temperature-stable behavior, and low EMI characteristics. It is engineered to provide reliable operation in demanding power electronics environments.
Consult official replacement lists for verified substitutes. Cross-reference electrical ratings such as VCEO, IC, and package dimensions when evaluating alternatives.
The maximum short-circuit withstand time is 5 µs, provided VGE = 15V, VCC ≤ 400V, and Tj ≤ 150°C.
No, the device does not include an integrated gate resistor; R_Gint is listed as none.
The typical turn-off energy loss (E_off) at Tj=25°C is 0.11 mJ under inductive load conditions.