ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 30A TO220-3
- Series：TrenchStop®
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：45 A
- Vce(on) (Max) @ Vge, Ic：2.05V @ 15V, 15A
- Power - Max：130 W
- Switching Energy：570µJ
- Input Type：Standard
- Gate Charge：87 nC
- Td (on/off) @ 25°C：17ns/188ns
- Test Condition：400V, 15A, 15Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：PG-TO220-3-1
- Grade：-
- Qualification：-
Download product information
Overview
The IGP15N60TXKSA1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, utilizing TRENCHSTOP™ and Fieldstop technology. It features a collector-emitter voltage of 600V and a continuous collector current of 26A at 25°C case temperature. The device has a maximum junction temperature of 175°C and a typical saturation voltage of 1.5V. Packaged in PG-TO220-3 for through-hole mounting, it offers low switching losses and high ruggedness.
Feature Summary
- TRENCHSTOP™ and Fieldstop technology ensures tight parameter distribution and high ruggedness.
- Positive temperature coefficient in VCE(sat) facilitates safe parallel operation.
- Short circuit withstand capability up to 5µs under specified conditions.
Applications
- Frequency converters
- Uninterrupted Power Supply (UPS)
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Confirm RoHS compliance details directly with the manufacturer or authorized distributor. Ensure the component matches the required thermal and electrical specifications for the target application before procurement.
Selection Notes
Select this component for applications requiring low conduction losses and high switching speeds at 600V. Consider the 175°C maximum junction temperature for high-temperature environments. Evaluate the thermal resistance values for adequate heat sinking design. Verify gate drive requirements align with the specified threshold and leakage currents.
Part Context
This part belongs to the Infineon TRENCHSTOP™ Series, designed for low-loss power switching applications. It represents an evolution in IGBT technology combining trench gate and fieldstop structures to optimize performance between conduction and switching losses compared to older planar technologies.
Replacement Considerations
Check for direct replacements within the IGP series or other TRENCHSTOP™ variants with compatible pinouts and ratings. Ensure any substitute maintains the same package style and thermal characteristics.
FAQ
What is the short circuit withstand time for the IGP15N60T?
The device supports a short circuit withstand time of 5µs when VGE=15V, VCC≤400V, and Tj≤150°C.
Does the IGP15N60T have an integrated diode?
No, the IGP15N60T is a standalone IGBT transistor without an integrated anti-parallel diode.
What is the maximum operating junction temperature?
The maximum operating junction temperature is +175°C.
